A novel technique for fabricating high reliable trench...

IEEE Transactions on Electron Devices 2003 Vol. 50; Iss. 2

A novel technique for fabricating high reliable trench DMOSFETs using self-align technique and hydrogen annealing

Jongdae Kim, Tae Moon Roh, Sang-Gi Kim, Il-Yong Park, Bun Lee
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Volume:
50
Year:
2003
Language:
english
Pages:
6
DOI:
10.1109/ted.2002.807442
File:
PDF, 639 KB
english, 2003
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