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Improvement of surface carrier mobility of HfO2 MOSFETs by high-temperature forming gas annealing
Onishi, K., Chang Seok Kang, Rino Choi, Hag-Ju Cho, Gopalan, S., Nieh, R.E., Krishnan, S.A., Lee, J.C.Volume:
50
Year:
2003
Language:
english
Pages:
7
DOI:
10.1109/ted.2002.807447
File:
PDF, 629 KB
english, 2003