Scaling of strained-Si n-MOSFETs into the ballistic regime...

Scaling of strained-Si n-MOSFETs into the ballistic regime and associated anisotropic effects

Bufler, F.M., Fichtner, W.
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Volume:
50
Year:
2003
Language:
english
Pages:
7
DOI:
10.1109/ted.2002.808552
File:
PDF, 326 KB
english, 2003
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