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Analysis of surface-state and impact-ionization effects on breakdown characteristics and gate-lag phenomena in narrowly recessed gate GaAs FETs
Mitani, Y., Kasai, D., Horio, K.Volume:
50
Year:
2003
Language:
english
Pages:
7
DOI:
10.1109/ted.2003.809039
File:
PDF, 754 KB
english, 2003