Nitride-based light emitting diodes with Si-doped...

IEEE Transactions on Electron Devices 2003 Vol. 50; Iss. 2

Nitride-based light emitting diodes with Si-doped In0.23Ga0.77N/GaN short period superlattice tunneling contact layer

Kuo, C.H., Chang, S.J., Su, Y.K., Wu, L.W., Chen, J.F., Sheu, J.K., Tsai, J.M.
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Volume:
50
Year:
2003
Language:
english
Pages:
3
DOI:
10.1109/ted.2003.809435
File:
PDF, 198 KB
english, 2003
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