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DC, RF, and microwave noise performance of AlGaN-GaN field effect transistors dependence of aluminum concentration
Wu Lu, Kumar, V., Piner, E.L., Adesida, I.Volume:
50
Year:
2003
Language:
english
Pages:
6
DOI:
10.1109/ted.2003.812083
File:
PDF, 423 KB
english, 2003