A viable self-aligned bottom-gate MOS transistor technology...

IEEE Transactions on Electron Devices 2003 Vol. 50; Iss. 9

A viable self-aligned bottom-gate MOS transistor technology for deep submicron 3-D SRAM

Shengdong Zhang, Chan, A.C.K., Ruqi Han, Ru Huang, Xiaoyan Liu, Yangyuan Wang, Ko, P.K., Mansun Chan
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
50
Year:
2003
Language:
english
Pages:
9
DOI:
10.1109/ted.2003.815859
File:
PDF, 1.03 MB
english, 2003
Conversion to is in progress
Conversion to is failed