Volume 50; Issue 9

IEEE Transactions on Electron Devices

Volume 50; Issue 9

1

Lateral ion implant straggle and mask proximity effect

Hook, T.B., Brown, J., Cottrell, P., Adler, E., Hoyniak, D., Johnson, J., Mann, R.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 618 KB

english, 2003

2

Nondestructive current localization upon high-current nanosecond switching of an avalanche transistor

Vainshtein, S., Yuferev, V., Kostamovaara, J.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 481 KB

english, 2003

3

Theory of ballistic nanotransistors

Rahman, A., Jing Guo, Datta, S., Lundstrom, M.S.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 964 KB

english, 2003

4

A comparison of low-frequency noise characteristics and noise sources in NPN and PNP InP-based heterojunction bipolar transistors

Hsu, S.S.H., Pavlidis, D.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 638 KB

english, 2003

5

Quantum mechanical effects on noise properties of nanoelectronic devices: application to Monte Carlo simulation

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 442 KB

english, 2003

6

Memory characterization of SiGe quantum dot flash memories with HfO2 and SiO2 tunneling dielectrics

Dong-Won Kim, Taehoon Kim, Banerjee, S.K.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 567 KB

english, 2003

7

Determination of interface and bulk traps in the subthreshold region of polycrystalline silicon thin-film transistors

Hastas, N.A., Tassis, D.H., Dimitriadis, C.A., Kamarinos, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 331 KB

english, 2003

8

Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions

Niu Jin, Sung-Yong Chung, Rice, A.T., Berger, P.R., Thompson, P.E., Rivas, C., Lake, R., Sudirgo, S., Kempisty, J.J., Curanovic, B., Rommel, S.L., Hirschman, K.D., Kurinec, S.K., Chi, P.H., Simons, D.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 377 KB

english, 2003

9

A GaAs-based field-modulating plate HFET with improved WCDMA peak-output-power characteristics

Wakejima, A., Ota, K., Matsunaga, K., Kuzuhara, M.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 310 KB

english, 2003

10

CMOS APS crosstalk characterization via a unique submicron scanning system

Shcherback, I., Yadid-Pecht, O.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 777 KB

english, 2003

11

An RF model of the accumulation-mode MOS varactor valid in both accumulation and depletion regions

Seong-Sik Song, Hyungcheol Shin

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 474 KB

english, 2003

12

New method to measure emitter resistance of heterojunction bipolar transistors

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 301 KB

english, 2003

13

Interface structure of ultrathin oxide prepared by N2O oxidation

Hei Wong, Poon, V.M.C., Kok, C.W., Chan, P.J., Gritsenko, V.A.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 268 KB

english, 2003

14

High-performance nMOSFETs using a novel strained Si/SiGe CMOS architecture

Olsen, S.H., O'Neill, A.G., Driscoll, L.S., Kwa, K.S.K., Chattopadhyay, S., Waite, A.M., Tang, Y.T., Evans, A.G.R., Norris, D.J., Cullis, A.G., Paul, D.J., Robbins, D.J.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 873 KB

english, 2003

15

Clocked molecular quantum-dot cellular automata

Lent, C.S., Isaksen, B.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 448 KB

english, 2003

16

Microscopic modeling of nonlinear transport in ballistic nanodevices

Mateos, J., Vasallo, B.G., Pardo, D., Gonzalez, T., Galloo, J.S., Bollaert, S., Roelens, Y., Cappy, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 1.13 MB

english, 2003

17

A viable self-aligned bottom-gate MOS transistor technology for deep submicron 3-D SRAM

Shengdong Zhang, Chan, A.C.K., Ruqi Han, Ru Huang, Xiaoyan Liu, Yangyuan Wang, Ko, P.K., Mansun Chan

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 1.03 MB

english, 2003

18

Logic and memory with nanocell circuits

Husband, C.P., Husband, S.M., Daniels, J.S., Tour, J.M.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 1.37 MB

english, 2003

19

Metal-induced grown Si nanostructures for large-area-device applications

Chunhai Ji, Anderson, W.A.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 549 KB

english, 2003

20

Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs

Asenov, A., Brown, A.R., Davies, J.H., Kaya, S., Slavcheva, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 1.35 MB

english, 2003

21

Operation of a quantum-dot cellular automata (QCA) shift register and analysis of errors

Kummamuru, R.K., Orlov, A.O., Ramasubramaniam, R., Lent, C.S., Bernstein, G.H., Snider, G.L.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 762 KB

english, 2003

22

Nanoscale silicon MOSFETs: A theoretical study

Sverdlov, V.A., Walls, T.J., Likharev, K.K.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 768 KB

english, 2003

23

nanoMOS 2.5: A two-dimensional simulator for quantum transport in double-gate MOSFETs

Zhibin Ren, Venugopal, R., Goasguen, S., Datta, S., Lundstrom, M.S.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 937 KB

english, 2003

24

Impact of crystal size and tunnel dielectric on semiconductor nanocrystal memory performance

Min She, Tsu-Jae King

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 393 KB

english, 2003

25

Foreword - Special issue on nanoelectronics

Snider, G.L., Samuelson, L., Sakaki, H.

Journal:

IEEE Transactions on Electron Devices

Year:

2003

Language:

english

File:

PDF, 219 KB

english, 2003

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