A physically based compact gate C-V model for ultrathin...

IEEE Transactions on Electron Devices 2005 Vol. 52; Iss. 6

A physically based compact gate C-V model for ultrathin (EOT ∼1 nm and below) gate dielectric MOS devices

Fei Li, Mudanai, S., Register, L.F., Banerjee, S.K.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
52
Year:
2005
Language:
english
Pages:
11
DOI:
10.1109/ted.2005.848079
File:
PDF, 592 KB
english, 2005
Conversion to is in progress
Conversion to is failed