IEEE Transactions on Electron Devices

1

Electronic properties of silicon nanowires

Yun Zheng, Rivas, C., Lake, R., Alam, K., Boykin, T.B., Klimeck, G.

Journal:

Year:

2005

Language:

english

File:

PDF, 596 KB

english, 2005

3

A physically based compact gate C-V model for ultrathin (EOT ∼1 nm and below) gate dielectric MOS devices

Fei Li, Mudanai, S., Register, L.F., Banerjee, S.K.

Journal:

IEEE Transactions on Electron Devices

Year:

2005

Language:

english

File:

PDF, 592 KB

english, 2005

4

Physical modeling and design of thin-film SOI lateral PIN photodiodes

Afzalian, A., Flandre, D.

Journal:

IEEE Transactions on Electron Devices

Year:

2005

Language:

english

File:

PDF, 435 KB

english, 2005

5

Ultrashallow junction formation by self-limiting LTP and its application to sub-65-nm node MOSFETs

Shima, A., Ashihara, H., Hiraiwa, A., Mine, T., Goto, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

2005

Language:

english

File:

PDF, 907 KB

english, 2005

6

Source resistance reduction of AlGaN-GaN HFETs with novel superlattice cap layer

Murata, T., Hikita, M., Hirose, Y., Uemoto, Y., Inoue, K., Tanaka, T., Ueda, D.

Journal:

IEEE Transactions on Electron Devices

Year:

2005

Language:

english

File:

PDF, 412 KB

english, 2005

7

Model to predict gate tunneling current of plasma oxynitrides

Kraus, P.A., Ahmed, K.Z., Olsen, C.S., Nouri, F.

Journal:

IEEE Transactions on Electron Devices

Year:

2005

Language:

english

File:

PDF, 272 KB

english, 2005

8

Sources of transconductance collapse in III-V nitrides - consequences of velocity-field relations and source/gate design

Yuh-Renn Wu, Singh, M., Singh, J.

Journal:

IEEE Transactions on Electron Devices

Year:

2005

Language:

english

File:

PDF, 443 KB

english, 2005

9

Nitride-based MQW LEDs with multiple GaN-SiN nucleation layers

Wei, S.C., Su, Y.K., Chang, S.J., Shi-Ming Chen, Wen-Liang Li

Journal:

IEEE Transactions on Electron Devices

Year:

2005

Language:

english

File:

PDF, 2.31 MB

english, 2005

10

A concept of SOI RESURF lateral devices with striped trench electrodes

Kanechika, M., Kodama, M., Uesugi, T., Tadano, H.

Journal:

IEEE Transactions on Electron Devices

Year:

2005

Language:

english

File:

PDF, 1.25 MB

english, 2005

11

Analysis of the parasitic S/D resistance in multiple-gate FETs

Dixit, A., Kottantharayil, A., Collaert, N., Goodwin, M., Jurczak, M., De Meyer, K.

Journal:

IEEE Transactions on Electron Devices

Year:

2005

Language:

english

File:

PDF, 940 KB

english, 2005

12

Surface recombination currents in "Type-II" NpN InP-GaAsSb-InP self-aligned DHBTs

Tao, N.G.M., Honggang Liu, Bolognesi, C.R.

Journal:

IEEE Transactions on Electron Devices

Year:

2005

Language:

english

File:

PDF, 500 KB

english, 2005

13

Impact of nonuniform graded dopant profile in polysilicon gate on gate leakage current

Sarkar, M., Ang Chew Hoe, Huang Jiayi, Chen, T.P.

Journal:

IEEE Transactions on Electron Devices

Year:

2005

Language:

english

File:

PDF, 363 KB

english, 2005

14

Backside-illuminated lateral PIN photodiode for CMOS image sensor on SOS substrate

Chen Xu, Chao Shen, Wen Wu, Chan, M.

Journal:

IEEE Transactions on Electron Devices

Year:

2005

Language:

english

File:

PDF, 953 KB

english, 2005

15

Continuous and precise work function adjustment for integratable dual metal gate CMOS technology using Hf-Mo binary alloys

Tzung-Lin Li, Chia-Hsin Hu, Wu-Lin Ho, Wang, H.C.-H., Chun-Yen Chang

Journal:

IEEE Transactions on Electron Devices

Year:

2005

Language:

english

File:

PDF, 1.06 MB

english, 2005

16

On the feasibility of nanoscale triple-gate CMOS transistors

Ji-Woon Yang, Fossum, J.G.

Journal:

IEEE Transactions on Electron Devices

Year:

2005

Language:

english

File:

PDF, 399 KB

english, 2005

17

Fabrication of lateral dc plasma display panels with planar pixel structure

Tarighat, R., Arvan, B., Mohajerzadeh, S., Goodarzi, A., Monavari, M., Esfahani, M.

Journal:

IEEE Transactions on Electron Devices

Year:

2005

Language:

english

File:

PDF, 779 KB

english, 2005

18

Analysis of near-IR photon emissions from 50-nm n- and p-channel Si MOSFETs

de Luna, N.C., Bailon, M.F., Tarun, A.B.

Journal:

IEEE Transactions on Electron Devices

Year:

2005

Language:

english

File:

PDF, 221 KB

english, 2005

19

Wavelength shift of gallium nitride light emitting diode with p-down structure

Wen-How Lan

Journal:

IEEE Transactions on Electron Devices

Year:

2005

Language:

english

File:

PDF, 134 KB

english, 2005

20

Monte Carlo simulations of high-speed InSb-InAlSb FETs

Herbert, D.C., Childs, P.A., Abram, R.A., Crow, G.C., Walmsley, M.

Journal:

IEEE Transactions on Electron Devices

Year:

2005

Language:

english

File:

PDF, 415 KB

english, 2005

21

Investigations of high-performance GaAs solar cells grown on Ge-Si1-xGex-Si substrates

Andre, C.L., Carlin, J.A., Boeckl, J.J., Wilt, D.M., Smith, M.A., Pitera, A.J., Lee, M.L., Fitzgerald, E.A., Ringel, S.A.

Journal:

IEEE Transactions on Electron Devices

Year:

2005

Language:

english

File:

PDF, 519 KB

english, 2005

22

A novel current-scaling a-Si:H TFTs pixel electrode circuit for AM-OLEDs

Yen-Chung Lin, Shieh, H.-P.D., Kanicki, J.

Journal:

IEEE Transactions on Electron Devices

Year:

2005

Language:

english

File:

PDF, 397 KB

english, 2005

23

Visualizing the doping profile of a silicon germanium HBT with polysilicon emitter using electron holography

Tilke, A.T., Lenk, A., Muhle, U., Wagner, C., Dahl, C., Lichte, H.

Journal:

IEEE Transactions on Electron Devices

Year:

2005

Language:

english

File:

PDF, 907 KB

english, 2005

24

Compact physical IR-drop models for chip/package co-design of gigascale integration (GSI)

Shakeri, K., Meindl, J.D.

Journal:

IEEE Transactions on Electron Devices

Year:

2005

Language:

english

File:

PDF, 717 KB

english, 2005

25

Comprehensive study of drain breakdown in MOSFETs

Junjun Li, Hongmei Li, Barnes, R., Rosenbaum, E.

Journal:

IEEE Transactions on Electron Devices

Year:

2005

Language:

english

File:

PDF, 369 KB

english, 2005

26

Device design guidelines for FC-SGT DRAM cells with high soft-error immunity

Matsuoka, F., Sakuraba, H., Masuoka, F.

Journal:

IEEE Transactions on Electron Devices

Year:

2005

Language:

english

File:

PDF, 371 KB

english, 2005

27

Characteristics of In0.425Al0.575As-InxGa1-xAs metamorphic HEMTs with pseudomorphic and symmetrically graded channels

Wei-Chou Hsu, Yeong-Jia Chen, Ching-Sung Lee, Tzong-Bin Wang, Jun-Chin Huang, Dong-Hai Huang, Ke-Hua Su, Yu-Shyan Lin, Chang-Luen Wu

Journal:

IEEE Transactions on Electron Devices

Year:

2005

Language:

english

File:

PDF, 664 KB

english, 2005

28

Characterization of accumulation layer capacitance for extracting data on high-κ gate dielectrics

Kar, S., Rawat, S., Rakheja, S., Reddy, D.

Journal:

IEEE Transactions on Electron Devices

Year:

2005

Language:

english

File:

PDF, 557 KB

english, 2005

29

Simulation and properties of the shielded twined helical deflecting system

Staras, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2005

Language:

english

File:

PDF, 139 KB

english, 2005

30

Reverse active mode current characteristics of SiGe HBTs

Jae-Sung Rieh, Jin Cai, Tak Ning, Stricker, A., Freeman, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2005

Language:

english

File:

PDF, 231 KB

english, 2005

31

Changes to the Editorial Board

Verret, D.

Journal:

IEEE Transactions on Electron Devices

Year:

2005

Language:

english

File:

PDF, 110 KB

english, 2005

32