New fundamental insights into capacitance modeling of...

IEEE Transactions on Electron Devices 2006 Vol. 53; Iss. 2

New fundamental insights into capacitance modeling of laterally nonuniform MOS devices

Aarts, A.C.T., van der Hout, R., Paasschens, J.C.J., Scholten, A.J., Willemsen, M.B., Klaassen, D.B.M.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
53
Year:
2006
Language:
english
Pages:
9
DOI:
10.1109/ted.2005.862235
File:
PDF, 599 KB
english, 2006
Conversion to is in progress
Conversion to is failed