IEEE Transactions on Electron Devices

1

Statistics of competing post-breakdown failure modes in ultrathin MOS devices

Sune, J., Wu, E.Y., Lai, W.L.

Journal:

Year:

2006

Language:

english

File:

PDF, 552 KB

english, 2006

2

Nonvolatile floating-gate memory programming enhancement using well bias

Makwana, J.J., Schroder, D.K.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 237 KB

english, 2006

3

Characterization and design methodology for low-distortion MOSFET-C analog structures in multithreshold deep-submicrometer SOI CMOS technologies

Vancaillie, L., Kilchytska, V., Alvarado, J., Cerdeira, A., Flandre, D.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 1.03 MB

english, 2006

4

De-embedding transmission line measurements for accurate modeling of IC designs

Mangan, A.M., Voinigescu, S.P., Ming-Ta Yang, Tazlauanu, M.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 848 KB

english, 2006

5

Flexible substrate micro-crystalline silicon and gated amorphous silicon strain sensors

Lisong Zhou, Soyoun Jung, Brandon, E., Jackson, T.N.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 919 KB

english, 2006

6

High-speed driving method using bipolar scan waveform in AC plasma display panel

Heung-Sik Tae, Soo-Kwan Jang, Ki-Duck Cho, Ki-Hyung Park

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 879 KB

english, 2006

7

Dependence of self-heating effects on operation conditions and device structures for polycrystalline silicon TFTs

Takechi, K., Nakata, M., Kanoh, H., Otsuki, S., Kaneko, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 609 KB

english, 2006

8

Proton irradiation of EMCCDs

Smith, D.R., Ingley, R., Holland, A.D.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 1.32 MB

english, 2006

9

New fundamental insights into capacitance modeling of laterally nonuniform MOS devices

Aarts, A.C.T., van der Hout, R., Paasschens, J.C.J., Scholten, A.J., Willemsen, M.B., Klaassen, D.B.M.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 599 KB

english, 2006

10

The nature of HT Vt shift in NROM memory transistors

Fuks, D., Kiv, A., Roizin, Y., Gutman, M., Avichail-Bibi, R., Maximova, T.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 917 KB

english, 2006

11

A compact model for SiGe HBT on thin-film SOI

Fregonese, S., Avenier, G., Maneux, C., Chantre, A., Zimmer, T.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 1.66 MB

english, 2006

12

Failure analysis of InGaAs/GaAs strained-Layer quantum-well lasers using a digital OBIC monitor

Takeshita, T., Sugo, M., Sasaki, T., Tohmori, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 952 KB

english, 2006

13

75 GHz InP HBT distributed amplifier with record figures of merit and low power dissipation

Cohen, E., Betser, Y., Sheinman, B., Cohen, S., Sidorov, S., Gavrilov, A., Ritter, D.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 346 KB

english, 2006

14

A computationally efficient physics-based compact bipolar transistor model for circuit Design-part I: model formulation

Schroter, M., Lehmann, S., Fregonese, S., Zimmer, T.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 376 KB

english, 2006

15

Direct observation of worst-bit leakage currents of DRAM

Mori, Y., Kamohara, S., Moniwa, M., Ohyu, K., Yamanaka, T., Yamada, R.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 160 KB

english, 2006

16

A computationally efficient physics-based compact bipolar transistor model for circuit Design-part II: parameter extraction and experimental results

Fregonese, S., Lehmann, S., Zimmer, T., Schroter, M., Celi, D., Ardouin, B., Beckrich, H., Brenner, P., Kraus, W.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 835 KB

english, 2006

17

Experimental validation of GaN HEMTs thermal management by using photocurrent measurements

Regoliosi, P., Reale, A., Di Carlo, A., Romanini, P., Peroni, M., Lanzieri, C., Angelini, A., Pirola, M., Ghione, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 589 KB

english, 2006

18

Electric field domains in p-Si/SiGe quantum cascade structures

Ikonic, Z., Harrison, P., Kelsall, R.W.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 357 KB

english, 2006

19

Temperature dependence of the EUV responsivity of silicon photodiode detectors

Kjornrattanawanich, B., Korde, R., Boyer, C.N., Holland, G.E., Seely, J.F.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 468 KB

english, 2006

20

Theory and experimental validation of a new analytical model for the position-dependent Hall Voltage in devices with arbitrary aspect ratio

Rudan, M., Reggiani, S., Gnani, E., Baccarani, G., Corvasce, C., Barlini, D., Ciappa, M., Fichtner, W., Denison, M., Jensen, N., Groos, G., Stecher, M.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 1.06 MB

english, 2006

21

Technology and circuit design considerations in quasi-planar double-gate SRAM

Ananthan, H., Roy, K.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 495 KB

english, 2006

22

An investigation of low-frequency noise in complementary SiGe HBTs

Enhai Zhao, Krithivasan, R., Sutton, A.K., Zhenrong Jin, Cressler, J.D., El-Kareh, B., Balster, S., Yasuda, H.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 779 KB

english, 2006

23

A new lossy substrate de-embedding method for sub-100 nm RF CMOS noise extraction and modeling

Jyh-Chyurn Guo, Yi-Min Lin

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 944 KB

english, 2006

24

Pulsed CsI-coated tufted carbon fiber cathode plasma

Statom, T.K.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 335 KB

english, 2006

25

Punch-through in short-channel AlGaN/GaN HFETs

Uren, M.J., Nash, K.J., Balmer, R.S., Martin, T., Morvan, E., Caillas, N., Delage, S.L., Ducatteau, D., Grimbert, B., De Jaeger, J.C.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 232 KB

english, 2006

26

Noise modeling methodologies in the presence of mobility degradation and their equivalence

Roy, A.S., Enz, C.C., Sallese, J.-M.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 358 KB

english, 2006

27

Design, fabrication, and characterization of low forward drop, low leakage, 1-kV 4H-SiC JBS rectifiers

Lin Zhu, Chow, T.P., Jones, K.A., Agarwal, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 715 KB

english, 2006

28

The plasma extraction transit-time oscillation in bipolar power Devices-Mechanism,EMC effects, and prevention

Siemieniec, R., Mourick, P., Netzel, M., Lutz, J.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 1.96 MB

english, 2006

29

Recessed-gate structure approach toward normally off high-Voltage AlGaN/GaN HEMT for power electronics applications

Saito, W., Takada, Y., Kuraguchi, M., Tsuda, K., Omura, I.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 640 KB

english, 2006

30

Nitrogen profile engineering in the interfacial SiON in a HfAlO/SiON gate dielectric by NO Re-oxidation

Torii, K., Mitsuhashi, R., Ohji, H., Kawahara, T., Kitajima, H.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 401 KB

english, 2006

31

Changes to the Editorial Board

Verret, R.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 144 KB

english, 2006

32