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15-nm base type-II InP/GaAsSb/InP DHBTs with FT=384 GHz and a 6-V BVCEO
Liu, H.G., Watkins, S.P., Bolognesi, C.R.Volume:
53
Year:
2006
Language:
english
Pages:
3
DOI:
10.1109/ted.2005.863542
File:
PDF, 238 KB
english, 2006