IEEE Transactions on Electron Devices

1

The influence of diffusion-induced dislocations on high efficiency silicon solar cells

Cousins, P.J., Cotter, J.E.

Journal:

Year:

2006

Language:

english

File:

PDF, 816 KB

english, 2006

2

Fabrication and mobility characteristics of SiGe surface channel pMOSFETs with a HfO2/TiN gate stack

Weber, O., Damlencourt, J.-F., Andrieu, F., Ducroquet, F., Ernst, T., Hartmann, J.-M., Papon, A.-M., Renault, O., Guillaumot, B., Deleonibus, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 953 KB

english, 2006

3

Frequency and bias-dependent modeling of correlated base and collector current RF noise in SiGe HBTs using quasi-static equivalent circuit

Kejun Xia, Guofu Niu, Sheridan, D.C., Sweeney, S.L.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 538 KB

english, 2006

4

A super beta bipolar transistor using SiGe-base surface accumulation layer transistor(SALTran) concept: a simulation study

Kumar, M.J., Singh, P.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 102 KB

english, 2006

5

On the temperature and carrier density dependence of electron saturation velocity in an AlGaN/GaN HEMT

Oxley, C.H., Uren, M.J., Coates, A., Hayes, D.G.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 130 KB

english, 2006

6

A microscopic interpretation of the RF noise performance of fabricated FDSOI MOSFETs

Raul Rengel, Martin, M.J., Gonzalez, T., Mateos, J., Pardo, D., Dambrine, G., Raskin, J.-P., Danneville, F.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 757 KB

english, 2006

7

15-nm base type-II InP/GaAsSb/InP DHBTs with FT=384 GHz and a 6-V BVCEO

Liu, H.G., Watkins, S.P., Bolognesi, C.R.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 238 KB

english, 2006

8

Performance improvement in tensile-strained In0.5Al0.5As/InxGa1-xAs/In0.5Al0.5As metamorphic HEMT

Wei-Chou Hsu, Dong-Hai Huang, Yu-Shyan Lin, Yeong-Jia Chen, Jun-Chin Huang, Chang-Luen Wu

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 701 KB

english, 2006

9

A novel self-aligned highly reliable sidewall split-gate flash memory

Caleb Yu-Sheng Cho, Ming-Jer Chen, Chiou-Feng Chen, Tuntasood, P., Fan, D.-T., Tseng-Yi Liu

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 568 KB

english, 2006

10

Monte Carlo study of strained GermaniumNanoscale bulk pMOSFETs

Ghosh, B., Xiao-Feng Fan, Register, L.F., Banerjee, S.K.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 346 KB

english, 2006

11

Use of double-channel heterostructures to improve the access resistance and linearity in GaN-based HEMTs

Palacios, T., Chini, A., Buttari, D., Heikman, S., Chakraborty, A., Keller, S., DenBaars, S.P., Mishra, U.K.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 207 KB

english, 2006

12

An ultralow-loss and broadband micromachined RF inductor for RFIC input-matching applications

Tao Wang, Yo-Sheng Lin, Shey-Shi Lu

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 317 KB

english, 2006

13

Low-frequency noise in TaSiN/HfO2 nMOSFETs and the effect of stress-relieved preoxide interfacial layer

Devireddy, S.P., Bigang Min, Celik-Butler, Z., Hsing-Huang Tseng, Tobin, P.J., Fang Wang, Zlotnicka, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 507 KB

english, 2006

14

A subthreshold surface potential model for short-channel MOSFET taking into account the varying depth of channel depletion layer due to source and drain junctions

Baishya, S., Mallik, A., Sarkar, C.K.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 405 KB

english, 2006

15

Numerical simulation of parasitic resistance effects in polycrystalline silicon TFTs

Gaucci, P., Valletta, A., Mariucci, L., Fortunato, G., Brotherton, S.D.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 256 KB

english, 2006

16

Accurate modeling of the effects of fringing area interface traps on scanning capacitance microscopy measurement

Hong, Y.D., Yew Tong Yeow, Chim, W.K., Jian Yan, Kin Mun Wong

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 477 KB

english, 2006

17

110-GHz fT silicon bipolar transistors implemented using fluorine implantation for boron diffusion suppression

Kham, M.N., Mubarek, H.A.W.E., Bonar, J.M., Ashburn, P., Ward, P., Fiore, L., Petralia, R., Alemanni, C., Messina, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 1.01 MB

english, 2006

18

High-resolution full-color LCD driven by OTFTs using novel passivation film

Kawasaki, M., Imazeki, S., Ando, M., Sekiguchi, Y., Hirota, S., Uemura, S., Kamata, T.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 1.20 MB

english, 2006

19

InAlN/GaN HEMTs: a first insight into technological optimization

Kuzmik, J., Kostopoulos, A., Konstantinidis, G., Carlin, J.-F., Georgakilas, A., Pogany, D.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 453 KB

english, 2006

20

Effect of the gap size on the SSI efficiency of split-gate memory cells

Palestri, P., Akil, N., Stefanutti, W., Slotboom, M., Selmi, L.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 568 KB

english, 2006

21

Level shifter embedded in drive circuits with amorphous silicon TFTs

Byung Seong Bae, Jae Won Choi, Jae Hwan Oh, Jang, J.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 388 KB

english, 2006

22

A novel filterless fluorescence detection sensor for DNA analysis

Maruyama, Y., Sawada, K., Takao, H., Ishida, M.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 1009 KB

english, 2006

23

Analysis of current flow in polycrystalline TFTs

Eccleston, W.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 248 KB

english, 2006

24

Characteristics of the full CMOS SRAM cell using body-tied TG MOSFETs (bulk FinFETs)

Tai-Su Park, Hye Jin Cho, Jeong Dong Choe, Sang Yeon Han, Donggun Park, Kinam Kim, Yoon, E., Jong-Ho Lee

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 707 KB

english, 2006

25

A broadband and scalable model for on-chip inductors incorporating substrate and conductor loss effects

Jyh-Chyurn Guo, Teng-Yang Tan

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 675 KB

english, 2006

26

A method to determine the gate bias-dependent and gate bias-independent components of MOSFET series resistance from S-parameters

Torres-Rios, E., Torres-Torres, R., Valdovinos-Fierro, G., Gutierrez-D, E.A.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 122 KB

english, 2006

27

Application of junction capacitance measurements to the characterization of solar cells

Recart, F., Cuevas, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 366 KB

english, 2006

28

Changes to the Editorial Board

Verret

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 140 KB

english, 2006

30