MOSFET ESD Breakdown Modeling and Parameter Extraction in...

IEEE Transactions on Electron Devices 2006 Vol. 53; Iss. 9

MOSFET ESD Breakdown Modeling and Parameter Extraction in Advanced CMOS Technologies

Vassilev, V., Lorenzini, M., Groeseneken, G.
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Volume:
53
Year:
2006
Language:
english
Pages:
10
DOI:
10.1109/ted.2006.880367
File:
PDF, 342 KB
english, 2006
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