Volume 53; Issue 9

IEEE Transactions on Electron Devices

Volume 53; Issue 9

1

Completely Surface-Potential-Based Compact Model of the Fully Depleted SOI-MOSFET Including Short-Channel Effects

Sadachika, N., Kitamaru, D., Uetsuji, Y., Navarro, D., Yusoff, M.M., Ezaki, T., Mattausch, H.J., Miura-Mattausch, M.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 366 KB

english, 2006

2

Modeling Advanced FET Technology in a Compact Model

Dunga, M.V., Chung-Hsun Lin, Xuemei Xi, Lu, D.D., Niknejad, A.M., Chenming Hu

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 478 KB

english, 2006

3

Monolithically Integrated Enhancement/Depletion-Mode AlGaN/GaN HEMT Inverters and Ring Oscillators Using Plasma Treatment

Yong Cai, Zhiqun Cheng, Tang, W.C.W., Lau, K.M., Chen, K.J.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 466 KB

english, 2006

4

A Unified Nonquasi-Static MOSFET Model for Large-Signal and Small-Signal Simulations

Hailing Wang, Xin Li, Wu, W., Gildenblat, G., van Langevelde, R., Smit, G.D.J., Scholten, A.J., Klaassen, D.B.M.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 293 KB

english, 2006

5

The Physical Background of JUNCAP2

Scholten, A.J., Smit, G.D.J., Durand, M., van Langevelde, R., Klaassen, D.B.M.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 452 KB

english, 2006

6

PSP: An Advanced Surface-Potential-Based MOSFET Model for Circuit Simulation

Gildenblat, G., Xin Li, Wu, W., Hailing Wang, Jha, A., van Langevelde, R., Smit, G.D.J., Scholten, A.J., Klaassen, D.B.M.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 619 KB

english, 2006

7

Analysis of Thermal Effect Influence in Gallium-Nitride-Based TLM Structures by Means of a Transport–Thermal Modeling

Benbakhti, B., Rousseau, M., Soltani, A., De Jaeger, J.C.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 402 KB

english, 2006

8

Table of contents

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 71 KB

english, 2006

9

Full-Color OLEDs Integrated by Dry Dye Printing

Long, K., Pschenitzka, F., Lu, M.-H., Sturm, J.C.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 531 KB

english, 2006

10

Current Degradation of a-Si:H/SiN TFTs at Room Temperature and Low Voltages

Merticaru, A.R., Mouthaan, A.J., Kuper, F.G.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 259 KB

english, 2006

11

Engineered Barriers With Hafnium Oxide for Nonvolatile Application

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 163 KB

english, 2006

12

A Comparison of MISiC Schottky-Diode Hydrogen Sensors Made by NO, , or Nitridations

Tang, W.M., Lai, P.T., Leung, C.H., Xu, J.P.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 225 KB

english, 2006

13

Performance of Low-Dark-Current 4H-SiC Avalanche Photodiodes With Thin Multiplication Layer

Xiangyi Guo, Beck, A.L., Zhihong Huang, Ning Duan, Campbell, J.C., Emerson, D., Sumakeris, J.J.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 951 KB

english, 2006

14

The Effect of Spacer Thicknesses on Si-Based Resonant Interband Tunneling Diode Performance and Their Application to Low-Power Tunneling Diode SRAM Circuits

Niu Jin, Sung-Yong Chung, Ronghua Yu, Heyns, R.M., Berger, P.R., Thompson, P.E.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 238 KB

english, 2006

15

SiGe HBT Without Selectively Implanted Collector (SIC) Exhibiting and

Jae-Sung Rieh, Khater, M., Freeman, G., Ahlgren, D.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 145 KB

english, 2006

16

A New Study on the Degradation Mechanism in Low-Temperature p-Channel Polycrystalline Silicon TFTs Under Dynamic Stress

Toyota, Y., Matsumura, M., Hatano, M., Shiba, T., Ohkura, M.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 309 KB

english, 2006

17

Modeling of Variation in Submicrometer CMOS ULSI Technologies

Springer, S.K., Sungjae Lee, Ning Lu, Nowak, E.J., Plouchart, J.-O., Watts, J.S., Williams, R.Q., Zamdmer, N.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 818 KB

english, 2006

18

Physics-Based Analysis and Simulation of Phase Noise in Oscillators

Sung-Min Hong, Chan Hyeong Park, Hong Shick Min, Young June Park

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 355 KB

english, 2006

19

Characteristics and Modeling of Sub-10-nm Planar Bulk CMOS Devices Fabricated by Lateral Source/Drain Junction Control

Wakabayashi, H., Ezaki, T., Sakamoto, T., Kawaura, H., Ikarashi, N., Ikezawa, N., Narihiro, M., Ochiai, Y., Ikezawa, T., Takeuchi, K., Yamamoto, T., Hane, M., Mogami, T.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 597 KB

english, 2006

20

Netlisting and Modeling Well-Proximity Effects

Watts, J., Ke-Wei Su, Basel, M.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 893 KB

english, 2006

21

Compact Modeling of Anomalous High-Frequency Behavior of MOSFET's Small-Signal NQS Parameters in Presence of Velocity Saturation

Roy, A.S., Enz, C.C., Sallese, J.-M.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 201 KB

english, 2006

22

Scalable Compact Circuit Model for Differential Spiral Transformers in CMOS RFICs

Wei Gao, Chao Jiao, Tao Liu, Zhiping Yu

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 363 KB

english, 2006

23

An Analytic Model to Account for Quantum–Mechanical Effects of MOSFETs Using a Parabolic Potential Well Approximation

Jin He, Chan, M., Xing Zhang, Yangyuan Wang

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 750 KB

english, 2006

24

A Physics-Based Analytic Solution to the MOSFET Surface Potential From Accumulation to Strong-Inversion Region

Jin He, Chan, M., Xing Zhang, Yangyuan Wang

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 413 KB

english, 2006

25

A Compact Physical Model for Yield Under Gate Length and Body Thickness Variations in Nanoscale Double-Gate CMOS

Ananthan, H., Roy, K.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 513 KB

english, 2006

26

MOSFET ESD Breakdown Modeling and Parameter Extraction in Advanced CMOS Technologies

Vassilev, V., Lorenzini, M., Groeseneken, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 342 KB

english, 2006

27

Compact Noise Models for MOSFETs

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 421 KB

english, 2006

28

Modeling and Significance of Fringe Capacitance in Nonclassical CMOS Devices With Gate–Source/Drain Underlap

Seung-Hwan Kim, Fossum, J.G., Ji-Woon Yang

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 620 KB

english, 2006

29

High-Frequency Noise of Modern MOSFETs: Compact Modeling and Measurement Issues

Deen, M.J., Chih-Hung Chen, Asgaran, S., Rezvani, G.A., Jon Tao, Kiyota, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 1.62 MB

english, 2006

30

Analytical Modeling of Output Conductance in Long-Channel Halo-Doped MOSFETs

Mudanai, S., Wei-Kai Shih, Rios, R., Xuemei Xi, Jung-Hoon Rhew, Kuhn, K., Packan, P.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 353 KB

english, 2006

31

Impact of Scaling on Analog Performance and Associated Modeling Needs

Murmann, B., Nikaeen, P., Connelly, D.J., Dutton, R.W.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 335 KB

english, 2006

32

A Program for Device Model Parameter Extraction from Gate Capacitance and Current of Ultrathin and High- Gate Stacks

Fei Li, Register, L.F., Hasan, M.M., Banerjee, S.K.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 647 KB

english, 2006

33

HiSIM2: Advanced MOSFET Model Valid for RF Circuit Simulation

Miura-Mattausch, M., Sadachika, N., Navarro, D., Suzuki, G., Takeda, Y., Miyake, M., Warabino, T., Mizukane, Y., Inagaki, R., Ezaki, T., Mattausch, H.J., Ohguro, T., Iizuka, T., Taguchi, M., Kumashiro

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 803 KB

english, 2006

34

The ITFET: A Novel FinFET-Based Hybrid Device

Weimin Zhang, Fossum, J.G., Mathew, L.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 1.02 MB

english, 2006

35

Effects of Kr, , and Ar on Address Discharge Time Lag in AC Plasma-Display Panel With High Xenon Content

Kyung Cheol Choi, Sang Ho Kim, Bhum Jae Shin, Jungwon Kang, Kwang-Yeol Choi, Eun-Ho Yoo

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 406 KB

english, 2006

36

On-Chip High- Variable Inductor Using Wafer-Level Chip-Scale Package Technology

Okada, K., Sugawara, H., Ito, H., Itoi, K., Sato, M., Abe, H., Ito, T., Masu, K.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 850 KB

english, 2006

37

A New Direct Evaluation Method to Obtain the Data Retention Time Distribution of DRAM

Seonghoon Jin, Myoung Jin Lee, Jeong-Hyong Yi, Jae Hoon Choi, Dae Gwan Kang, In-Young Chung, Young June Park, Hong Shick Min

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 320 KB

english, 2006

38

Reliability Comparison of Triple-Gate Versus Planar SOI FETs

Crupi, F., Kaczer, B., Degraeve, R., Subramanian, V., Srinivasan, P., Simoen, E., Abhisek Dixit, Jurczak, M., Groeseneken, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 399 KB

english, 2006

39

Comparison of the DC and Microwave Performance of AlGaN/GaN HEMTs Grown on SiC by MOCVD With Fe-Doped or Unintentionally Doped GaN Buffer Layers

Desmaris, V., Rudzinski, M., Rorsman, N., Hageman, P.R., Larsen, P.K., Zirath, H., Rodle, T.C., Jos, H.F.F.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 275 KB

english, 2006

40

A Highly Sensitive Bolometer Structure With an Electrostatic-Actuated Signal Bridge

Tae-Sik Kim, Hee Chul Lee

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 619 KB

english, 2006

41

A Carrier-Transit-Delay-Based Nonquasi-Static MOSFET Model for Circuit Simulation and Its Application to Harmonic Distortion Analysis

Navarro, D., Takeda, Y., Miyake, M., Nakayama, N., Machida, K., Ezaki, T., Mattausch, H.J., Miura-Mattausch, M.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 517 KB

english, 2006

42

Correcting the Output Conductance for Self-Heating in InAlAs/InGaAs HBTs

Weib, O., Baureis, P., Kellmann, N., Weber, N., Weigel, R.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 489 KB

english, 2006

43

New Schottky-Gate Bipolar-Mode Field-Effect Transistor (SBMFET): Design and Analysis Using Two-Dimensional Simulation

Kumar, M.J., Bahl, H.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 234 KB

english, 2006

44

Determination of Diffusion Lengths With the Use of EBIC From a Diffused Junction With Any Values of Junction Depths

Kurniawan, O., Ong, V.K.S.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 125 KB

english, 2006

45

Validation of MOSFET model Source–Drain Symmetry

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 146 KB

english, 2006

46

Compact-Modeling Solutions For Nanoscale Double-Gate and Gate-All-Around MOSFETs

Iniguez, B., Fjeldly, T.A., Lazaro, A., Danneville, F., Deen, M.J.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 617 KB

english, 2006

47

Study of Laser-Debonded GaN LEDs

Chung-Pui Chan, Jie Gao, Tai-Man Yue, Surya, C., Ng, A.M.-C., Djurisic, A.B., Liu, P.C.-K., Ming Li

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 402 KB

english, 2006

48

Temperature Dependence of Impact Ionization in Submicrometer Silicon Devices

Massey, D.J., David, J.P.R., Rees, G.J.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 245 KB

english, 2006

49

Polysilicon Memory Switching: Electrothermal-Induced Order

Herner, S.B., Bandyopadhyay, A., Jahn, C., Kidwell, D., Petti, C.J., Walker, A.J.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 503 KB

english, 2006

50

Equivalent Circuit Description of Threshold Voltage Shift in a-Si:H TFTs From a Probabilistic Analysis of Carrier Population Dynamics

Sambandan, S., Nathan, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 220 KB

english, 2006

51

High-Performance MIM Capacitors for Analog Applications

Chiang, K.C., Ching-Chien Huang, Chen, G.L., Wen Jauh Chen, Kao, H.L., Yung-Hsien Wu, Chin, A., McAlister, S.P.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 472 KB

english, 2006

52

Control of Self-Heating in Thin Virtual Substrate Strained Si MOSFETs

Olsen, S.H., Escobedo-Cousin, E., Varzgar, J.B., Agaiby, R., Seger, J., Dobrosz, P., Chattopadhyay, S., Bull, S.J., O'Neill, A.G., Hellstrom, P.-E., Edholm, J., Ostling, M., Lyutovich, K.L., Oehme, M.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 447 KB

english, 2006

53

– Characterization of Tunnel Diodes and Multijunction Solar Cells

Guter, W., Bett, A.W.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 524 KB

english, 2006

54

High-Density Reduced-Stack Logic Circuit Techniques Using Independent-Gate Controlled Double-Gate Devices

Meng-Hsueh Chiang, Keunwoo Kim, Ching-Te Chuang, Tretz, C.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 910 KB

english, 2006

55

An Approach to Improve the Signal-to-Noise Ratio of Active Pixel Sensor for Low-Light-Level Applications

Faramarzpour, N., Deen, M.J., Shirani, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 729 KB

english, 2006

56

Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode

Yong Cai, Yugang Zhou, Lau, K.M., Chen, K.J.

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 435 KB

english, 2006

57

Small-Signal Modeling of SiGe HBTs Using Direct Parameter-Extraction Method

Han-Yu Chen, Kun-Ming Chen, Guo-Wei Huang, Chun-Yen Chang

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 304 KB

english, 2006

58

[Front cover]

Journal:

IEEE Transactions on Electron Devices

Year:

2006

File:

PDF, 79 KB

2006

59

Special Issue on Advanced Compact Models and 45-nm Modeling Challenges

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 142 KB

english, 2006

60

Corrections to “On the Modeling and Design of Schottky Field-Effect Transistors” and “Comparison Study of Tunneling Models for Schottky Field Effect Transistors and the Effect of Schottky Barrier Lowering”

Journal:

IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 32 KB

english, 2006

61

IEEE Transactions on Electron Devices publication information

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IEEE Transactions on Electron Devices

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2006

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english

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PDF, 61 KB

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62

IEEE Transactions on Electron Devices information for authors

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IEEE Transactions on Electron Devices

Year:

2006

Language:

english

File:

PDF, 38 KB

english, 2006

63

Blank page [back cover]

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IEEE Transactions on Electron Devices

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2006

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PDF, 2 KB

2006

64

Blank page

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IEEE Transactions on Electron Devices

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2006

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PDF, 2 KB

2006

65

Special issue on spintronics

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IEEE Transactions on Electron Devices

Year:

2006

File:

PDF, 186 KB

2006

66

Special issue on simulation and modeling of nanoelectronics devices

Journal:

IEEE Transactions on Electron Devices

Year:

2006

File:

PDF, 173 KB

2006

67

22nd IEEE Non-Volatile Semiconductor Memory Workshop 2007

Journal:

IEEE Transactions on Electron Devices

Year:

2006

File:

PDF, 486 KB

2006

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