Work Function Tunability of Refractory Metal Nitrides by...

IEEE Transactions on Electron Devices 2007 Vol. 54; Iss. 11

Work Function Tunability of Refractory Metal Nitrides by Lanthanum or Aluminum Doping for Advanced CMOS Devices

Xin Peng Wang, Eu-Jin Lim, A., Hong Yu Yu, Ming-Fu Li, Chi Ren, Wei-Yip Loh, Chun Xiang Zhu, Chin, A., Trigg, A.D., Yee-Chia Yeo, Biesemans, S., Guo-Qiang Lo, Dim-Lee Kwong
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Volume:
54
Year:
2007
Language:
english
Pages:
7
DOI:
10.1109/ted.2007.907130
File:
PDF, 742 KB
english, 2007
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