Volume 54; Issue 11

IEEE Transactions on Electron Devices

Volume 54; Issue 11

1

Influence of Block Oxide Width on a Silicon-on-Partial-Insulator Field-Effect Transistor

Jyi-Tsong Lin, Yi-Chuen Eng

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 1.03 MB

english, 2007

2

Direct Solution of the Boltzmann Transport Equation and Poisson–SchrÖdinger Equation for Nanoscale MOSFETs

Scaldaferri, S., Curatola, G., Iannaccone, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 428 KB

english, 2007

3

High-Performance In0.5Ga0.5 As/GaAs Quantum-Dot Lasers on Silicon With Multiple-Layer Quantum-Dot Dislocation Filters

Jun Yang, Bhattacharya, P., Zetian Mi

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 320 KB

english, 2007

4

Electron-Scattering Mechanisms in Heavily Doped Silicon Carbide MOSFET Inversion Layers

Tilak, V., Matocha, K., Dunne, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 219 KB

english, 2007

5

Universal Method for Extracting Transport Parameters From Monte Carlo Device Simulation

Brugger, S.C., Schenk, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 322 KB

english, 2007

6

The Impact of Gate-Oxide Breakdown on Common-Source Amplifiers With Diode-Connected Active Load in Low-Voltage CMOS Processes

Jung-Sheng Chen, Ming-Dou Ker

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 438 KB

english, 2007

7

Poly-Si Thin-Film Transistors: An Efficient and Low-Cost Option for Digital Operation

Jing Li, Bansal, A., Roy, K.

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 665 KB

english, 2007

8

Performance Enhancement in Uniaxial Strained Silicon-on-Insulator N-MOSFETs Featuring Silicon–Carbon Source/Drain Regions

Kah-Wee Ang, King-Jien Chui, Chih-Hang Tung, Balasubramanian, N., Samudra, G.S., Yee-Chia Yeo

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 803 KB

english, 2007

9

A Physical Model on Scattering at High-κ Dielectric/SiO2 Interface of SiGe p-MOSFETs

Zhang, X.F., Xu, J.P., Lai, P.T., Li, C.X.

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 249 KB

english, 2007

10

A Statistical Framework for Estimation of Full-Chip Leakage-Power Distribution Under Parameter Variations

Dadgour, H.F., Sheng-Chih Lin, Banerjee, K.

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 937 KB

english, 2007

11

Design Methodology of Body-Biasing Scheme for Low Power System LSI With Multi- Vth Transistors

Yasuda, Y., Akiyama, Y., Yamagata, Y., Goto, Y., Imai, K.

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 1.01 MB

english, 2007

12

Device Modeling at Cryogenic Temperatures: Effects of Incomplete Ionization

Akturk, A., Allnutt, J., Dilli, Z., Goldsman, N., Peckerar, M.

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 459 KB

english, 2007

13

A Compact Model for Polysilicon TFTs Leakage Current Including the Poole–Frenkel Effect

Wu, W.J., Yao, R.H., Li, S.H., Hu, Y.F., Deng, W.L., Zheng, X.R.

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 606 KB

english, 2007

14

Design and Fabrication of Asymmetric MOSFETs Using a Novel Self-Aligned Structure

Jong Pil Kim, Woo Young Choi, Jae Young Song, Sang Wan Kim, Jong Duk Lee, Byung-Gook Park

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 986 KB

english, 2007

15

The Influence of Parasitic Effects on Injection-Level-Dependent Lifetime Data

Chen, F.W., Cotter, J.E., Abbott, M.D., Li Tsu-Tsung, A., Fisher, K.C.

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 1.02 MB

english, 2007

16

Enhancement of Drain Current in Planar MOSFETs by Dopant Profile Engineering Using Nonmelt Laser Spike Annealing

Shima, A., Mine, T., Torii, K., Hiraiwa, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 288 KB

english, 2007

17

Analysis of Constitution and Characteristics of Lateral Nonuniformity Effects of MOS Devices Using QM-Based Terman Method

Hao-Peng Lin, Jenn-Gwo Hwu

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 310 KB

english, 2007

18

Electrical Analyses of Germanium MIS Structure and Spectroscopic Measurement of the Interface Trap Density in an Insulator/Germanium Interface at Room Temperature

Fukuda, Y., Otani, Y., Itayama, Y., Ono, T.

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 257 KB

english, 2007

19

Transparent Thin-Film Transistors Using ZnMgO as Dielectrics and Channel

Huizhen Wu, Jun Liang, Guofen Jin, Yanfeng Lao, Tianning Xu

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 176 KB

english, 2007

20

Work Function Tunability of Refractory Metal Nitrides by Lanthanum or Aluminum Doping for Advanced CMOS Devices

Xin Peng Wang, Eu-Jin Lim, A., Hong Yu Yu, Ming-Fu Li, Chi Ren, Wei-Yip Loh, Chun Xiang Zhu, Chin, A., Trigg, A.D., Yee-Chia Yeo, Biesemans, S., Guo-Qiang Lo, Dim-Lee Kwong

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 742 KB

english, 2007

21

A New Triode Structure With a Carbon Nanotube Cathode

Yunsong Di, Wei Lei, Xiaobing Zhang, Yunkang Cui, Qilong Wang

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 692 KB

english, 2007

22

Analytical Expression for the Bias and Frequency-Dependent Capacitance of MOS Varactors

Gildenblat, G., Zhu, Z., Wu, W.

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 132 KB

english, 2007

23

Impact of a Nonideal Metal Gate on Surface Optical Phonon-Limited Mobility in High- κ Gated MOSFETs

Shah, R., De Souza, M.M.

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 266 KB

english, 2007

24

Large-Signal Model for AlGaN/GaN HEMTs Accurately Predicts Trapping- and Self-Heating-Induced Dispersion and Intermodulation Distortion

Jarndal, A., Kompa, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 664 KB

english, 2007

25

Cavity Excitation Described by the van der Pol Equation in Transit-Time Tubes

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 343 KB

english, 2007

26

2.4-μm-Cutoff AlGaAsSb/InGaAsSb Phototransistors for Shortwave-IR Applications

Refaat, T.F., Abedin, M.N., Sulima, O.V., Ismail, S., Singh, U.N.

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 412 KB

english, 2007

27

An Analytical Model of an OCVD-Based Measurement Technique of the Local Carrier Lifetime

Bellone, S., Licciardo, G.D., Guerriero, G., Rubino, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 437 KB

english, 2007

28

A New Gate-Charging Protection Strategy for Transistors in Integrated-Circuit Test Chips and Products

Lin, W., Smudski, J.

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 196 KB

english, 2007

29

A Low-Power Robust Humidity Sensor in a Standard CMOS Process

Okcan, B., Akin, T.

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 523 KB

english, 2007

30

Bipolar-Mode Multibit Soft-Error-Mechanism Analysis of SRAMs by Three-Dimensional Device Simulation

Yamaguchi, K., Takemura, Y., Osada, K., Saito, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 629 KB

english, 2007

31

A Broadband and Scalable On-Chip Inductor Model Appropriate for Operation Modes of Varying Substrate Resistivities

Jyh-Chyurn Guo, Teng-Yang Tan

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 656 KB

english, 2007

32

Characterization of the Body Node in PD SOI MOSFETs Using Multiport VNA Measurements

Lederer, D., Raskin, J.-P.

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 490 KB

english, 2007

33

AlGaN/GaN HEMTs on a (001)-Oriented Silicon Substrate Based on 100-nm SiN Recessed Gate Technology for Microwave Power Amplification

Boulay, S., Touati, S., Sar, A.A., Hoel, V., Gaquiere, C., De Jaeger, J.-C., Joblot, S., Cordier, Y., Semond, F., Massies, J.

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 828 KB

english, 2007

34

Modeling of the Threshold Voltage in Strained Si/Si1 − x Gex/Si1 − yGey(x ≥ y) CMOS Architectures

Tsang, Y.L., Chattopadhyay, S., Uppal, S., Escobedo-Cousin, E., Ramakrishnan, H.K., Olsen, S.H., O'Neill, A.G.

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 509 KB

english, 2007

35

Design Considerations for Sub-90-nm Split-Gate Flash-Memory Cells

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 1.14 MB

english, 2007

36

Comparison Between the Dynamic Performance of Double- and Single-Gate AlInAs/InGaAs HEMTs

Vasallo, B.G., Wichmann, N., Bollaert, S., Roelens, Y., Cappy, A., Gonzalez, T., Pardo, D., Mateos, J.

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 622 KB

english, 2007

37

Poly-Si-Gate-Related Variability in Decananometer MOSFETs With Conventional Architecture

Brown, A.R., Roy, G., Asenov, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 1.03 MB

english, 2007

38

Table of contents

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 56 KB

english, 2007

39

IEEE Transactions on Electron Devices publication information

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 61 KB

english, 2007

40

Special issue on silicon carbide devices and technology

Journal:

IEEE Transactions on Electron Devices

Year:

2007

File:

PDF, 186 KB

2007

41

Special issue on “Reliability of GaN, GaAs and related Compounds”

Journal:

IEEE Transactions on Electron Devices

Year:

2007

File:

PDF, 98 KB

2007

42

2008 IEEE EDS Masters Student Fellowship call for nominations

Journal:

IEEE Transactions on Electron Devices

Year:

2007

File:

PDF, 67 KB

2007

43

IEEE Transactions on Electron Devices information for authors

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 37 KB

english, 2007

44

Blank page [back cover]

Journal:

IEEE Transactions on Electron Devices

Year:

2007

File:

PDF, 2 KB

2007

45

Experimental Investigation of Pulsed-Laser-Annealed Ultralow-Conduction-Loss 600-V Nonpunchthrough Insulated-Gate Bipolar Transistors

Kwang-Hoon Oh, Seung Chul Lee, Eun-Taek Kim, Jong Hun Lee, Kyu-Hyun Lee, Soo-Seong Kim, Chongman Yun

Journal:

IEEE Transactions on Electron Devices

Year:

2007

Language:

english

File:

PDF, 395 KB

english, 2007

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