A Novel nand Flash Memory With Asymmetric S/D Structure...

IEEE Transactions on Electron Devices 2008 Vol. 55; Iss. 1

A Novel nand Flash Memory With Asymmetric S/D Structure Using Fringe-Field-Induced Inversion Layer

Ki-Tae Park, Jong-Sun Sel, Jungdal Choi, Yunheub Song, Changhyun Kim, Kinam Kim
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Volume:
55
Year:
2008
Language:
english
Pages:
7
DOI:
10.1109/ted.2007.911088
File:
PDF, 851 KB
english, 2008
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