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Epitaxial Optimization of 130-nm Gate-Length InGaAs/InAlAs/InP HEMTs for Low-Noise Applications
Malmkvist, M., Shumin Wang, Grahn, J.Volume:
56
Year:
2009
Language:
english
Pages:
6
DOI:
10.1109/ted.2008.2008163
File:
PDF, 305 KB
english, 2009