A Novel Characterization Scheme of Interface Roughness for...

A Novel Characterization Scheme of Interface Roughness for Surface Roughness Scattering-Limited Mobilities of Electrons and Holes in Unstrained- and Strained-Si MOSFETs

Yi Zhao, Matsumoto, H., Sato, T., Koyama, S., Takenaka, M., Takagi, S.
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Volume:
57
Year:
2010
Language:
english
Pages:
10
DOI:
10.1109/ted.2010.2052394
File:
PDF, 971 KB
english, 2010
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