Volume 57; Issue 9

IEEE Transactions on Electron Devices

Volume 57; Issue 9

1

Efficiency Optimization on Dye-Sensitized Solar Cells With Low-Frequency Noise Analysis

Szu Cheng Lai, Ming Fei Yang, Bin Dolmanan, S., Lin Ke, Xiao Wei Sun

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 197 KB

english, 2010

2

Linearity Indices and Linearity Improvement of 2-D Tetralateral Position-Sensitive Detector

Song Cui, Yeng Chai Soh

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 553 KB

english, 2010

3

Origin of the Flatband-Voltage Roll-Off Phenomenon in Metal/High- Gate Stacks

Bersuker, G., Chang Seo Park, Huang-Chun Wen, Choi, K., Price, J., Lysaght, P., Hsing-Huang Tseng, Sharia, O., Demkov, A., Ryan, J.T., Lenahan, P.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 822 KB

english, 2010

4

Nano-Reconfigurable Cells With Hybrid Circuits of Single-Electron Transistors and MOSFETs

Bingcai Sui, Liang Fang, Yaqing Chi, Chao Zhang

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 445 KB

english, 2010

5

Hetero-Gate-Dielectric Tunneling Field-Effect Transistors

Woo Young Choi, Woojun Lee

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 354 KB

english, 2010

6

One-Volt Oxide Thin-Film Transistors on Paper Substrates Gated by -Based Solid Electrolyte With Controllable Operation Modes

Jia Sun, Jie Jiang, Aixia Lu, Qing Wan

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 663 KB

english, 2010

7

Effects of Parasitics and Interface Traps on Ballistic Nanowire FET in the Ultimate Quantum Capacitance Limit

Majumdar, K., Bhat, N., Majhi, P., Jammy, R.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1.12 MB

english, 2010

8

A Novel Characterization Scheme of Interface Roughness for Surface Roughness Scattering-Limited Mobilities of Electrons and Holes in Unstrained- and Strained-Si MOSFETs

Yi Zhao, Matsumoto, H., Sato, T., Koyama, S., Takenaka, M., Takagi, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 971 KB

english, 2010

9

Effects of Substrate Orientation on the Photovoltaic Performance of InGaAs Solar Cells

Ming-Chun Tseng, Ray-Hua Horng, Snin-Nan Lin, Dong-Sing Wuu, Chih-Hung Wu, Chih-Kang Chao, Hsin-Her Yu

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 587 KB

english, 2010

10

Per-Pixel Dark Current Spectroscopy Measurement and Analysis in CMOS Image Sensors

Webster, E.A.G., Nicol, R.L., Grant, L., Renshaw, D.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 831 KB

english, 2010

11

Computational Study on the Performance of Si Nanowire pMOSFETs Based on the Method

Mincheol Shin, Sunhee Lee, Klimeck, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1.31 MB

english, 2010

12

Effects of Substrate Orientation and Channel Stress on Short-Channel Thin SOI MOSFETs

Majumdar, A., Ouyang, C., Koester, S.J., Haensch, W.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 481 KB

english, 2010

13

eLeNA: A Parametric CMOS Active-Pixel Sensor for the Evaluation of Reset Noise Reduction Architectures

Anaxagoras, T., Kent, P., Allinson, N., Turchetta, R., Pickering, T., Maneuski, D., Blue, A., O'Shea, V.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1.23 MB

english, 2010

14

Insights on Design and Scalability of Thin-BOX FD/SOI CMOS

Chouksey, S., Fossum, J.G., Agrawal, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 544 KB

english, 2010

15

The Effect of Disordered Microscale Holes in the Front Dielectric Layer of AC Plasma Display Panels

Kwan Hyun Cho, Sung Il Ahn, Seong Min Lee, Kyung Cheol Choi

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 718 KB

english, 2010

16

Statistical Simulation of Progressive NBTI Degradation in a 45-nm Technology pMOSFET

Brown, A.R., Huard, V., Asenov, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 635 KB

english, 2010

17

ACCNT: A Metallic-CNT-Tolerant Design Methodology for Carbon Nanotube VLSI: Analyses and Design Guidelines

Lin, A., Jie Zhang, Patil, N., Hai Wei, Mitra, S., Wong, H.-S.P.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 903 KB

english, 2010

18

Structure and Ultraviolet Electroluminescence of Nanocomposite/ -GaN Heterostructure Light-Emitting Diodes

Miin-Jang Chen, Ying-Tsang Shih, Mong-Kai Wu, Hsing-Chao Chen, Hung-Ling Tsai, Wei-Chih Li, Jer-Ren Yang, Hon Kuan, Shiojiri, M.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 724 KB

english, 2010

19

Investigation of Radiation Hardness of Germanium Photovoltaic Cells

Hoheisel, R., Fernandez, J., Dimroth, F., Bett, A.W.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 342 KB

english, 2010

20

Optimized Thermal Management From a Chip to a Heat Sink for High-Power GaN-Based Light-Emitting Diodes

Ray-Hua Horng, Jhih-Sin Hong, Yu-Li Tsai, Dong-Sing Wuu, Chih-Ming Chen, Chia-Ju Chen

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 760 KB

english, 2010

21

How to Extract the Sheet Resistance and Hall Mobility From Arbitrarily Shaped Planar Four-Terminal Devices With Extended Contacts

Cornils, M., Rottmann, A., Paul, O.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 945 KB

english, 2010

22

Prediction and Modeling of Thin Gate Oxide Breakdown Subject to Arbitrary Transient Stresses

Ellis, D.F., Yuanzhong Zhou, Salcedo, J.A., Hajjar, J., Liou, J.J.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 824 KB

english, 2010

23

Defect-Induced Breakdown in Multicrystalline Silicon Solar Cells

Breitenstein, O., Bauer, J., Wagner, J.-M., Zakharov, N., Blumtritt, H., Lotnyk, A., Kasemann, M., Kwapil, W., Warta, W.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1.28 MB

english, 2010

24

A Novel Five-Photomask Low-Temperature Polycrystalline Silicon CMOS Structure for AMLCD Application

Sang-Jin Lee, Seok-Woo Lee, Kum-Mi Oh, Soo-Jeong Park, Kyung-Eon Lee, Yong-Su Yoo, Kyoung-Moon Lim, Myoung-Su Yang, Yong-Suk Yang, Yong-Kee Hwang

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 900 KB

english, 2010

25

Corrections to “Charge Collection From Within a Collecting Junction Well” [May 08 1220-1228]

Kurniawan, O., Tan, C. C., Ong, V. K. S.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 49 KB

english, 2010

26

Study on the Temperature Dependence of the Microwave-Noise Characteristics in AlGaN/GaN HEMTs

Zhi Hong Liu, Geok Ing Ng, Arulkumaran, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 318 KB

english, 2010

27

Highly Reliable Amorphous Silicon Gate Driver Using Stable Center-Offset Thin-Film Transistors

Jae Won Choi, Jae Ik Kim, Se Hwan Kim, Jin Jang

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 661 KB

english, 2010

28

Crystallographic-Orientation-Dependent Gate-Induced Drain Leakage in Nanoscale MOSFETs

Pandey, R.K., Murali, K.V.R.M., Furkay, S.S., Oldiges, P.J., Nowak, E.J.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1.03 MB

english, 2010

29

Compact Charge Model for Independent-Gate Asymmetric DGFET

Dessai, G., Wu, W., Gildenblat, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 308 KB

english, 2010

30

Comprehensive Investigation of Statistical Effects in Nitride Memories—Part I: Physics-Based Modeling

Mauri, A., Compagnoni, C.M., Amoroso, S.M., Maconi, A., Ghetti, A., Spinelli, A.S., Lacaita, A.L.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 794 KB

english, 2010

31

Comprehensive Investigation of Statistical Effects in Nitride Memories—Part II: Scaling Analysis and Impact on Device Performance

Monzio Compagnoni, C., Mauri, A., Amoroso, S.M., Maconi, A., Greco, E., Spinelli, A.S., Lacaita, A.L.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 583 KB

english, 2010

32

High-Reliability Dynamic-Threshold Source-Side Injection for 2-Bit/Cell With MLC Operation of Wrapped Select-Gate SONOS in nor-Type Flash Memory

Kuan-Ti Wang, Tien-Sheng Chao, Woei-Cherng Wu, Wen-Luh Yang, Chien-Hsing Lee, Tsung-Min Hsieh, Jhyy-Cheng Liou, Shen-De Wang, Tzu-Ping Chen, Chien-Hung Chen, Chih-Hung Lin, Hwi-Huang Chen

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 522 KB

english, 2010

33

Barrier Lowering and Backscattering Extraction in Short-Channel MOSFETs

Giusi, G., Iannaccone, G., Maji, D., Crupi, F.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 259 KB

english, 2010

34

Simulation and Measurements of Stray Minority Carrier Protection Structures in CMOS Image Sensors

Dong-Long Lin, Ching-Chun Wang, Chia-Ling Wei

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1.24 MB

english, 2010

35

Part I: On the Behavior of STI-Type DeNMOS Device Under ESD Conditions

Shrivastava, M., Gossner, H., Baghini, M.S., Rao, V.R.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1.53 MB

english, 2010

36

Part II: On the Three-Dimensional Filamentation and Failure Modeling of STI Type DeNMOS Device Under Various ESD Conditions

Shrivastava, M., Gossner, H., Baghini, M.S., Rao, V.R.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1.51 MB

english, 2010

37

Proposal and Performance Analysis of Normally Off GaN/InAlN/AlN/GaN HEMTs With 1-nm-Thick InAlN Barrier

Kuzmik, J., Ostermaier, C., Pozzovivo, G., Basnar, B., Schrenk, W., Carlin, J.-F., Gonschorek, M., Feltin, E., Grandjean, N., Douvry, Y., Gaquière, C., De Jaeger, J.-C., Čičo, K., Fröhlich, K., Š

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 613 KB

english, 2010

38

Manipulating the Microcavity Structure for Highly Efficient Inverted Top-Emitting Organic Light-Emitting Diodes: Simulation and Experiment

Qiang Wang, Zhaoqi Deng, Jiangshan Chen, Dongge Ma

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 597 KB

english, 2010

39

Intrinsic Capacitance Characteristics of Top-Contact Organic Thin-Film Transistors

Kangmin Kim, Youngmin Kim

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 523 KB

english, 2010

40

Adaptive Local Dimming Lighting of Mercury-Free Flat Fluorescent Lamp Using Dual Auxiliary Electrode

Jae-Chul Jung, Byung Joo Oh, In Woo Seo, Ki-Woong Whang

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 690 KB

english, 2010

41

Perspective Performances of MOS-Gated GTO in High-Power Applications

Ronsisvalle, C., Enea, V., Abbate, C., Busatto, G., Sanseverino, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 221 KB

english, 2010

42

Location- and Orientation-Controlled (100) and (110) Single-Grain Si TFTs Without Seed Substrate

Tao Chen, Ishihara, R., Beenakker, K.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 869 KB

english, 2010

43

Investigation of the Electrostatic Discharge Performance of GaN-Based Light-Emitting Diodes With Naturally Textured p-GaN Contact Layers Grown on Miscut Sapphire Substrates

Yi-Jung Liu, Der-Feng Guo, Li-Yang Chen, Tsung-Han Tsai, Chien-Chang Huang, Tai-You Chen, Chi-Hsiang Hsu, Wen-Chau Liu

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 798 KB

english, 2010

44

Table of contents

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 68 KB

english, 2010

45

Blank page [back cover]

Journal:

IEEE Transactions on Electron Devices

Year:

2010

File:

PDF, 5 KB

2010

46

IEEE Transactions on Electron Devices information for authors

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 39 KB

english, 2010

47

IEEE Transactions on Electron Devices publication information

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 52 KB

english, 2010

48

2010 IEEE International Electron Devices Meeting (IEDM)

Journal:

IEEE Transactions on Electron Devices

Year:

2010

File:

PDF, 1.03 MB

2010

49

The 23rd IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD 11)

Journal:

IEEE Transactions on Electron Devices

Year:

2010

File:

PDF, 1.38 MB

2010

50

Theoretical Screening of Candidate Materials for DRAM Capacitors and Experimental Demonstration of a Cubic-Hafnia MIM Capacitor

Mise, N., Ogawa, A., Tonomura, O., Sekiguchi, T., Horii, S., Itatani, H., Saito, T., Sakai, M., Takebayashi, Y., Yamazaki, H., Torii, K.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 634 KB

english, 2010

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