Part II: On the Three-Dimensional Filamentation and Failure...

IEEE Transactions on Electron Devices 2010 Vol. 57; Iss. 9

Part II: On the Three-Dimensional Filamentation and Failure Modeling of STI Type DeNMOS Device Under Various ESD Conditions

Shrivastava, M., Gossner, H., Baghini, M.S., Rao, V.R.
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Volume:
57
Year:
2010
Language:
english
Pages:
8
DOI:
10.1109/ted.2010.2055278
File:
PDF, 1.51 MB
english, 2010
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