A Model of the Gate Capacitance of Surrounding Gate Transistors: Comparison With Double-Gate MOSFETs
Ruiz, F.J.G., Tienda-Luna, I.M., Godoy, A., Donetti, L., Gamiz, F.Volume:
57
Year:
2010
Language:
english
Pages:
7
DOI:
10.1109/ted.2010.2058630
File:
PDF, 412 KB
english, 2010