Volume 57; Issue 10

IEEE Transactions on Electron Devices

Volume 57; Issue 10

1

Pulsewidth Modulation With Current Uniformization for AM-OLEDs

Kimura, M., Suzuki, D., Koike, M., Sawamura, S., Kato, M.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 694 KB

english, 2010

2

Self-Aligned Amorphous Silicon Thin-Film Transistors Fabricated on Clear Plastic at 300

Cherenack, K.H., Hekmatshoar, B., Sturm, J.C., Wagner, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 782 KB

english, 2010

3

Shape Effect of Silicon Nitride Subwavelength Structure on Reflectance for Silicon Solar Cells

Chandra Sahoo, K., Yiming Li, Chang, E.Y.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 622 KB

english, 2010

4

Intrinsic Gain in Self-Aligned Polysilicon Source-Gated Transistors

Sporea, R.A., Trainor, M.J., Young, N.D., Shannon, J.M., Silva, S.R.P.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 362 KB

english, 2010

5

Electronic Transport in Laterally Asymmetric Channel MOSFET for RF Analog Applications

Rengel, R., Martin, M.J.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 458 KB

english, 2010

6

A Direct Method for Charge Collection Probability Computation Using the Reciprocity Theorem

Kurniawan, O., Chee Chin Tan, Ong, V.K.S., Erping Li, Humphreys, C.J.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 579 KB

english, 2010

7

Operation of a Ka-band Harmonic-Multiplying Gyrotron Traveling-Wave Tube

Jirun Luo, Chongqing Jiao, Yuantao Luan, Guangjiang Yuan, Wei Guo, Min Zhu, Yansheng Zhang

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 567 KB

english, 2010

8

Design, Simulation, and Characterization of Variable Inductor With Electrostatic Actuation Fabricated by Using Surface Micromachining Technology

Dong-Ming Fang, Xiu-Han Li, Quan Yuan, Hai-Xia Zhang

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 723 KB

english, 2010

9

An Artificial Neural Network at Device Level Using Simplified Architecture and Thin-Film Transistors

Kasakawa, T., Tabata, H., Onodera, R., Kojima, H., Kimura, M., Hara, H., Inoue, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1.14 MB

english, 2010

10

20% Efficient Screen-Printed Cells With Spin-On-Dielectric-Passivated Boron Back-Surface Field

Das, A., Meemongkolkiat, V., Kim, D., Ramanathan, S., Rohatgi, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 899 KB

english, 2010

11

Channel Length and Threshold Voltage Dependence of Transistor Mismatch in a 32-nm HKMG Technology

Hook, T.B., Johnson, J.B., Jin-Ping Han, Pond, A., Shimizu, T., Tsutsui, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 324 KB

english, 2010

12

Dual- Spacer Device Architecture for the Improvement of Performance of Silicon n-Channel Tunnel FETs

Virani, H.G., Adari, R.B.R., Kottantharayil, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 834 KB

english, 2010

13

Physics, Technology, and Modeling of Complementary Asymmetric MOSFETs

Bulucea, C., Bahl, S.R., French, W.D., Jeng-Jiun Yang, Francis, P., Harjono, T., Krishnamurthy, V., Tao, J., Parker, C.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 2.14 MB

english, 2010

14

Observation of Slow Oxide Traps at MOSFETs Having Metal/High-k Gate Dielectric Stack in Accumulation Mode

Heung-Jae Cho, Younghwan Son, Byoungchan Oh, Sanghoon Lee, Jong-Ho Lee, Byung-Gook Park, Hyungcheol Shin

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 753 KB

english, 2010

15

Analysis of Safe Operating Area of NLDMOS and PLDMOS Transistors Subject to Transient Stresses

Malobabic, S., Salcedo, J.A., Hajjar, J., Liou, J.J.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 728 KB

english, 2010

16

Impact Ionization in InAs Electron Avalanche Photodiodes

Marshall, A.R.J., David, J.P.R., Chee Hing Tan

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 324 KB

english, 2010

17

High-Density MIM Capacitors With Porous Anodic Alumina Dielectric

Hourdakis, E., Nassiopoulou, A.G.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 411 KB

english, 2010

18

A Model of the Gate Capacitance of Surrounding Gate Transistors: Comparison With Double-Gate MOSFETs

Ruiz, F.J.G., Tienda-Luna, I.M., Godoy, A., Donetti, L., Gamiz, F.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 412 KB

english, 2010

19

Monte Carlo Study of the Dynamic Performance of a 100-nm-Gate InAlAs/InGaAs Velocity Modulation Transistor

Vasallo, B.G., Wichmann, N., Bollaert, S., Roelens, Y., Cappy, A., González, T., Pardo, D., Mateos, J.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 698 KB

english, 2010

20

Transient Simulation to Analyze Flash Memory Erase Improvements Due to Germanium Content in the Substrate

Wolfson, S.C., Ho, F.D.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 280 KB

english, 2010

21

Statistics of Resistance Drift Due to Structural Relaxation in Phase-Change Memory Arrays

Boniardi, M., Ielmini, D., Lavizzari, S., Lacaita, A.L., Redaelli, A., Pirovano, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 731 KB

english, 2010

22

Avalanche Breakdown Delay in ESD Protection Diodes

Johnsson, D., Pogany, D., Willemen, J., Gornik, E., Stecher, M.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 765 KB

english, 2010

23

Emerging N-Face GaN HEMT Technology: A Cellular Monte Carlo Study

Marino, F.A., Saraniti, M., Faralli, N., Ferry, D.K., Goodnick, S.M., Guerra, D.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 415 KB

english, 2010

24

Influence of Gold Nanoparticles on the Characteristics of Plasma Display Panels

Woo Hyun Kim, Kwan Hyun Cho, Kyung Cheol Choi, Do Youb Kim, Park, O.O.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 581 KB

english, 2010

25

Light Extraction Study on Thin-Film GaN Light-Emitting Diodes With Electrodes Covering by Wafer Bonding and Textured Surfaces

Ray-Hua Horng, Yi-Anne Lu, Dong-Sing Wuu

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 470 KB

english, 2010

26

Impact of Semiconductor and Interface-State Capacitance on Metal/High-k/GaAs Capacitance–Voltage Characteristics

Sonnet, A.M., Hinkle, C.L., Dawei Heh, Bersuker, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 326 KB

english, 2010

27

Physical Origins of Threshold Voltage Variation Enhancement in Si(110) n/pMOSFETs

Saitoh, M., Yasutake, N., Nakabayashi, Y., Uchida, K., Numata, T.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 392 KB

english, 2010

28

InAlAs/InGaAs Interband Tunnel Diodes for SRAM

Sutar, S., Qin Zhang, Seabaugh, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 820 KB

english, 2010

29

Low-Cost ZnO-Based Ultraviolet–Infrared Dual-Band Detector Sensitized With PbS Quantum Dots

Jayaweera, P.V.V., Pitigala, P.K.D.D.P., Jia Feng Shao, Tennakone, K., Perera, A.G.U., Jayaweera, P.M., Baltrusaitis, J.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 484 KB

english, 2010

30

on-State Hot Carrier Degradation in Drain-Extended NMOS Transistors

Varghese, D., Moens, P., Alam, M.A.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 908 KB

english, 2010

31

A Compact Model for Undoped Symmetric Double-Gate Polysilicon Thin-Film Transistors

Junkai Huang, Wanling Deng, Xueren Zheng, Xiaozhou Jiang

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 792 KB

english, 2010

32

Electrical TCAD Simulations of a Germanium pMOSFET Technology

Hellings, G., Eneman, G., Krom, R., De Jaeger, B., Mitard, J., De Keersgieter, A., Hoffmann, T., Meuris, M., De Meyer, K.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1.09 MB

english, 2010

33

Boosting Green GaInN/GaN Light-Emitting Diode Performance by a GaInN Underlying Layer

Yong Xia, Wenting Hou, Liang Zhao, Mingwei Zhu, Detchprohm, T., Wetzel, C.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 426 KB

english, 2010

34

Insulating Halos to Boost Planar NMOSFET Performance

Wen-Wei Hsu, Chao-Yun Lai, Chee Wee Liu, Chih-Hsin Ko, Ta-Ming Kuan, Tzu-Juei Wang, Wen-Chin Lee, Wann, C.H.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 816 KB

english, 2010

35

Tunnel Diode Modeling, Including Nonlocal Trap-Assisted Tunneling: A Focus on III–V Multijunction Solar Cell Simulation

Baudrit, M., Algora, C.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 498 KB

english, 2010

36

Comparative Study of Noise Degradation Caused by Fowler–Nordheim Tunneling Stress in Silicon Nanowire Transistors and FinFETs

Chengqing Wei, Yong-Zhong Xiong, Xing Zhou, Singh, N., Xiao-Jun Yuan, Guo Qiang Lo, Lap Chan, Dim-Lee Kwong

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 600 KB

english, 2010

37

Influence of Emitter Width and Emitter–Base Distance on the Current Gain in 4H-SiC Power BJTs

Buono, B., Ghandi, R., Domeij, M., Malm, B.G., Zetterling, C.-M., Östling, M.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1.14 MB

english, 2010

38

Voltage-Driven Partial-RESET Multilevel Programming in Phase-Change Memories

Braga, S., Sanasi, A., Cabrini, A., Torelli, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1.41 MB

english, 2010

39

Interconnects for Novel State Variables: Performance Modeling and Device and Circuit Implications

Rakheja, S., Naeemi, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 583 KB

english, 2010

40

Cross-Point Memory Array Without Cell Selectors—Device Characteristics and Data Storage Pattern Dependencies

Liang, J., Wong, H.-S.P.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1.16 MB

english, 2010

41

Analytic Model for the Surface Potential and Drain Current in Negative Capacitance Field-Effect Transistors

Jimenez, D., Miranda, E., Godoy, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 444 KB

english, 2010

42

Hierarchical Simulation of Statistical Variability: From 3-D MC With “ ab initio” Ionized Impurity Scattering to Statistical Compact Models

Kovac, U., Alexander, C., Roy, G., Riddet, C., Binjie Cheng, Asenov, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 963 KB

english, 2010

43

Electrical Characteristics of the Concentric-Shape Carbon Nanotube Network Device in pH Buffer Solution

Jun Ho Cheon, Jaeheung Lim, Sung Min Seo, Jun-Myung Woo, Seok Hyang Kim, Yongjoo Kwon, Jung Woo Ko, Tae June Kang, Yong Hyup Kim, Young June Park

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 495 KB

english, 2010

44

A Deterministic Boltzmann Equation Solver Based on a Higher Order Spherical Harmonics Expansion With Full-Band Effects

Sung-Min Hong, Matz, G., Jungemann, C.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 249 KB

english, 2010

45

A New Multipulse Technique for Probing Electron Trap Energy Distribution in High- Materials for Flash Memory Application

Xue Feng Zheng, Wei Dong Zhang, Govoreanu, B., Jian Fu Zhang, van Houdt, J.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 621 KB

english, 2010

46

Novel Metamorphic HEMTs With Highly Doped InGaAs Source/Drain Regions for High Frequency Applications

Sahoo, K.C., Chien-I Kuo, Yiming Li, Chang, E.Y.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 527 KB

english, 2010

47

Evaluation of Transient Behavior of Polysilicon-Bound Diode for Fast ESD Applications

You Li, Liou, J.J.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1.48 MB

english, 2010

48

HiSIM-HV: A Compact Model for Simulation of High-Voltage MOSFET Circuits

Oritsuki, Y., Yokomichi, M., Kajiwara, T., Tanaka, A., Sadachika, N., Miyake, M., Kikuchihara, H., Johguchi, K., Feldmann, U., Mattausch, H.J., Miura-Mattausch, M.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1023 KB

english, 2010

49

Grain-Orientation Induced Work Function Variation in Nanoscale Metal-Gate Transistors—Part I: Modeling, Analysis, and Experimental Validation

Dadgour, H.F., Endo, K., De, V.K., Banerjee, K.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 582 KB

english, 2010

50

Grain-Orientation Induced Work Function Variation in Nanoscale Metal-Gate Transistors—Part II: Implications for Process, Device, and Circuit Design

Dadgour, H.F., Endo, K., De, V.K., Banerjee, K.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 752 KB

english, 2010

51

A Kink-Effect-Free Poly-Si Thin-Film Transistor With Current and Electric Field Split Structure Design

Feng-Tso Chien, Yi-Ju Chen

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1.41 MB

english, 2010

52

A Novel Trapping/Detrapping Model for Defect Profiling in High- Materials Using the Two-Pulse Capacitance–Voltage Technique

Aguado, D.R., Govoreanu, B., Zhang, W.D., Jurczak, M., De Meyer, K., Van Houdt, J.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 874 KB

english, 2010

53

Thickness and Temperature Dependence of Dielectric Reliability Characteristics in Cerium Dioxide Thin Film

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 645 KB

english, 2010

54

CMOS Open-Gate Ion-Sensitive Field-Effect Transistors for Ultrasensitive Dopamine Detection

Dong-Che Li, Po-Hung Yang, Lu, M.S.-C.

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 627 KB

english, 2010

55

High-Speed Reset Waveform for PDP With Erase Address Discharge

Jae-Chul Jung, Ki-Woong Whang

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 1.37 MB

english, 2010

56

A New Class of Charge-Trap Flash Memory With Resistive Switching Mechanisms

Ho-Myoung An, Eui Bok Lee, Hee-Dong Kim, Yu Jeong Seo, Tae Geun Kim

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 493 KB

english, 2010

57

Table of contents

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 70 KB

english, 2010

58

Call for Nominations-Electron Devices Society Administrative Committee

Journal:

IEEE Transactions on Electron Devices

Year:

2010

File:

PDF, 102 KB

2010

59

IEEE Transactions on Electron Devices information for authors

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 39 KB

english, 2010

60

IEEE Transactions on Electron Devices publication information

Journal:

IEEE Transactions on Electron Devices

Year:

2010

Language:

english

File:

PDF, 52 KB

english, 2010

61

Blank page [back cover]

Journal:

IEEE Transactions on Electron Devices

Year:

2010

File:

PDF, 5 KB

2010