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Influence of Emitter Width and Emitter–Base Distance on the Current Gain in 4H-SiC Power BJTs
Buono, B., Ghandi, R., Domeij, M., Malm, B.G., Zetterling, C.-M., Östling, M.Volume:
57
Year:
2010
Language:
english
Pages:
7
DOI:
10.1109/ted.2010.2061854
File:
PDF, 1.14 MB
english, 2010