Quantum Transport Simulation of Strain and Orientation...

IEEE Transactions on Electron Devices 2011 Vol. 58; Iss. 1

Quantum Transport Simulation of Strain and Orientation Effects in Sub-20 nm Silicon-on-Insulator FinFETs

Keng-Ming Liu, Register, L.F., Banerjee, S.K.
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Volume:
58
Year:
2011
Language:
english
Pages:
7
DOI:
10.1109/ted.2010.2084090
File:
PDF, 891 KB
english, 2011
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