Volume 58; Issue 1

IEEE Transactions on Electron Devices

Volume 58; Issue 1

1

Particle-In-Cell Simulation Analysis of a Multicavity W-Band Sheet Beam Klystron

Young-Min Shin, Jian-Xun Wang, Barnett, L.R., Luhmann, N.C.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 882 KB

english, 2011

2

Design, Optimization, and Scaling of MEM Relays for Ultra-Low-Power Digital Logic

Hei Kam, Tsu-Jae King Liu, Stojanović, V., Marković, D., Alon, E.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 943 KB

english, 2011

3

A Dual-Color IR Quantum Cascade Photodetector With Two Output Electrical Signals

Rostami, A., Rezayee, R.O., Saghai, H.R., Yadipour, R., Baghban, H.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.02 MB

english, 2011

4

Modeling and Performance Characterization of Double-Walled Carbon Nanotube Array Field-Effect Transistors

Huang, J.Z., Wen-Yan Yin

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 944 KB

english, 2011

5

A Compact Model for Dual-Gate One-Dimensional FET: Application to Carbon-Nanotube FETs

Frégonèse, S., Maneux, C., Zimmer, T.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.12 MB

english, 2011

6

Surface-Passivation Effects on the Performance of 4H-SiC BJTs

Ghandi, R., Buono, B., Domeij, M., Esteve, R., Schöner, A., Jisheng Han, Dimitrijev, S., Reshanov, S.A., Zetterling, C.-M., Östling, M.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 466 KB

english, 2011

7

Hot Carrier Effect and Tunneling Effect of Location- and Orientation-Controlled (100)- and (110)-Oriented Single-Grain Si TFTs Without Seed Substrate

Tao Chen, Ishihara, R., Beenakker, K.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.08 MB

english, 2011

8

Quantum Transport Simulation of Strain and Orientation Effects in Sub-20 nm Silicon-on-Insulator FinFETs

Keng-Ming Liu, Register, L.F., Banerjee, S.K.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 891 KB

english, 2011

9

Schottky Barrier Carbon Nanotube Transistor: Compact Modeling, Scaling Study, and Circuit Design Applications

Najari, M., Frégonèse, S., Maneux, C., Mnif, H., Masmoudi, N., Zimmer, T.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.42 MB

english, 2011

10

Performance of AlGaN/GaN High-Electron Mobility Transistors With AlSiN Passivation

Harvard, E., Brown, R., Shealy, J.R.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 648 KB

english, 2011

11

Nanowire to Single-Electron Transistor Transition in Trigate SOI MOSFETs

Akhavan, N.D., Afzalian, A., Chi-Woo Lee, Ran Yan, Ferain, I., Razavi, P., Ran Yu, Fagas, G., Colinge, J.-P.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 988 KB

english, 2011

12

In situ Surface Passivation of Gallium Nitride for Metal–Organic Chemical Vapor Deposition of High-Permittivity Gate Dielectric

Xinke Liu, Hock-Chun Chin, Leng-Seow Tan, Yee-Chia Yeo

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.37 MB

english, 2011

13

Gate Direct Tunneling Current in Uniaxially Compressive Strained nMOSFETs: A Sensitive Measure of Electron Piezo Effective Mass

Wei-Han Lee, Ming-Jer Chen

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 876 KB

english, 2011

14

Enhanced Output Power of Near-Ultraviolet InGaN/AlGaN LEDs With Patterned Distributed Bragg Reflectors

Wen-Yu Lin, Dong-Sing Wuu, Shih-Cheng Huang, Ray-Hua Horng

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.06 MB

english, 2011

15

An Improved Methodology for the CAD Optimization of Multiple Floating Field-Limiting Ring Terminations

El Baradai, N., Sanfilippo, C., Carta, R., Cappelluti, F., Bonani, F.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 600 KB

english, 2011

16

Large-Signal Model for Independent DG MOSFET

Thakur, P.K., Mahapatra, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 606 KB

english, 2011

17

Dark Current Mechanism in Bulk GaInNAs Lattice Matched to GaAs

Tan, L.J.J., Wai Mun Soong, David, J.P.R., Jo Shien Ng

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 262 KB

english, 2011

18

Two-Dimensional Simulation of Undermask Penetration in 4H-SiC Implanted With Ions

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 332 KB

english, 2011

19

Interface-Trap Effects in Inversion-Type Enhancement-Mode N-Channel MOSFETs

Morassi, L., Padovani, A., Verzellesi, G., Veksler, D., Injo Ok, Bersuker, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 437 KB

english, 2011

20

Inductance Properties of In Situ-Grown Horizontally Aligned Carbon Nanotubes

Minghui Sun, Zhiyong Xiao, Yang Chai, Yuan Li, Chan, P.C.H.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 886 KB

english, 2011

21

Effect of Postdeposition Annealing in Oxygen Ambient on Gallium-Nitride-Based MOS Capacitors With Cerium Oxide Gate

Hock Jin Quah, Kuan Yew Cheong, Hassan, Z., Lockman, Z.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 654 KB

english, 2011

22

A Program Disturb Model and Channel Leakage Current Study for Sub-20 nm nand Flash Cells

Torsi, A., Yijie Zhao, Haitao Liu, Tanzawa, T., Goda, A., Kalavade, P., Parat, K.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 917 KB

english, 2011

23

A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

Jungwoo Joh, del Alamo, J.A.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.14 MB

english, 2011

24

A Method for Fabricating Practically Channel-Corner-Free Polycrystalline Silicon Thin-Film Transistors

Il-Suk Kang, Cheol-Ho Park, Young-Su Kim, Nam-Kyu Song, Seung-Ki Joo, Hyun-Sang Seo, Chi Won Ahn, Jun-Mo Yang, Wook-Jung Hwang

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 509 KB

english, 2011

25

High-Mobility Ge N-MOSFETs and Mobility Degradation Mechanisms

Kuzum, D., Krishnamohan, T., Nainani, A., Yun Sun, Pianetta, P.A., Wong, H.-S.P., Saraswat, K.C.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 786 KB

english, 2011

26

Germanium Nanowire Metal–Oxide–Semiconductor Field-Effect Transistor Fabricated by Complementary-Metal–Oxide–Semiconductor-Compatible Process

Peng, J.W., Singh, N., Lo, G.Q., Bosman, M., Ng, C.M., Lee, S.J.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 444 KB

english, 2011

27

Threshold Voltage Fluctuation by Random Telegraph Noise in Floating Gate nand Flash Memory String

Sung-Min Joe, Jeong-Hyong Yi, Sung-Kye Park, Hyungcheol Shin, Byung-Gook Park, Young June Park, Jong-Ho Lee

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 917 KB

english, 2011

28

Pseudo-CMOS: A Design Style for Low-Cost and Robust Flexible Electronics

Tsung-Ching Huang, Fukuda, K., Chun-Ming Lo, Yung-Hui Yeh, Sekitani, T., Someya, T., Kwang-Ting Cheng

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.44 MB

english, 2011

29

Doping Dependence of Thermal Oxidation on n-Type 4H-SiC

Daas, B.K., Islam, M.M., Chowdhury, I.A., Feng Zhao, Sudarshan, T.S., Chandrashekhar, M.V.S.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 619 KB

english, 2011

30

Printed WORM Memory on a Flexible Substrate Based on Rapid Electrical Sintering of Nanoparticles

Leppäniemi, J., Aronniemi, M., Mattila, T., Alastalo, A., Allen, M., Seppä, H.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 482 KB

english, 2011

31

Electrical Instability of the a-Si:H TFTs Fabricated by Maskless Laser-Write Lithography on a Spherical Surface

Geonwook Yoo, Radtke, D., Gwanghyeon Baek, Zeitner, U.D., Kanicki, J.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 375 KB

english, 2011

32

A New High-Density and Ultrasmall-Cell-Size Contact RRAM (CR-RAM) With Fully CMOS-Logic-Compatible Technology and Circuits

Yuan Heng Tseng, Chia-En Huang, Kuo, C., Chih, Y., Ya-Chin King, Chrong Jung Lin

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 946 KB

english, 2011

33

TDDB and Pulse-Breakdown Studies of Si-Rich Antifuses and Antifuse-Based ROMs

Kaplar, R.J., Habermehl, S.D., Apodaca, R.T., Havener, B., Roherty-Osmun, E.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 201 KB

english, 2011

34

Simulation and Analysis of InGaAs Power MOSFET Performances and Reliability

Steighner, J.B., Jiann-Shiun Yuan, Yidong Liu

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.55 MB

english, 2011

35

Annealing-Induced Changes in Electrical Characteristics of Al/Al-Rich Diodes

Zhen Liu, Chen, T.P., Yang Liu, Zhan Hong Cen, Shu Zhu, Ming Yang, Jen It Wong, Yi Bin Li, Sam Zhang

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 801 KB

english, 2011

36

Effect of Pocket Doping and Annealing Schemes on the Source-Pocket Tunnel Field-Effect Transistor

Jhaveri, R., Nagavarapu, V., Woo, J.C.S.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 459 KB

english, 2011

37

Table of contents

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 67 KB

english, 2011

38

Special issue on materials, processing and reliability of 3D interconnects

Journal:

IEEE Transactions on Electron Devices

Year:

2011

File:

PDF, 134 KB

2011

39

Changes in the Editorial Board

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 46 KB

english, 2011

40

IEEE Transactions on Electron Devices information for authors

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 31 KB

english, 2011

41

IEEE Transactions on Electron Devices publication information

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 52 KB

english, 2011

42

Blank page [back cover]

Journal:

IEEE Transactions on Electron Devices

Year:

2011

File:

PDF, 5 KB

2011

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