Performance of AlGaN/GaN High-Electron Mobility Transistors...

IEEE Transactions on Electron Devices 2011 Vol. 58; Iss. 1

Performance of AlGaN/GaN High-Electron Mobility Transistors With AlSiN Passivation

Harvard, E., Brown, R., Shealy, J.R.
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Volume:
58
Year:
2011
Language:
english
Pages:
8
DOI:
10.1109/ted.2010.2084370
File:
PDF, 648 KB
english, 2011
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