High-Mobility Ge N-MOSFETs and Mobility Degradation...

IEEE Transactions on Electron Devices 2011 Vol. 58; Iss. 1

High-Mobility Ge N-MOSFETs and Mobility Degradation Mechanisms

Kuzum, D., Krishnamohan, T., Nainani, A., Yun Sun, Pianetta, P.A., Wong, H.-S.P., Saraswat, K.C.
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
58
Year:
2011
Language:
english
Pages:
8
DOI:
10.1109/ted.2010.2088124
File:
PDF, 786 KB
english, 2011
Conversion to is in progress
Conversion to is failed