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Germanium Nanowire Metal–Oxide–Semiconductor Field-Effect Transistor Fabricated by Complementary-Metal–Oxide–Semiconductor-Compatible Process
Peng, J.W., Singh, N., Lo, G.Q., Bosman, M., Ng, C.M., Lee, S.J.Volume:
58
Year:
2011
Language:
english
Pages:
6
DOI:
10.1109/ted.2010.2088125
File:
PDF, 444 KB
english, 2011