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TaN and Sidewall Gate-Etch Damage Influence on Program, Erase, and Retention of Sub-50-nm TANOS nand Flash Memory Cells
Beug, M.F., Melde, T., Paul, J., Knoefler, R.Volume:
58
Year:
2011
Language:
english
Pages:
7
DOI:
10.1109/ted.2011.2121070
File:
PDF, 790 KB
english, 2011