Volume 58; Issue 6

IEEE Transactions on Electron Devices

Volume 58; Issue 6

1

Special issue on materials, processing and reliability of 3D interconnects

Journal:

IEEE Transactions on Electron Devices

Year:

2011

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PDF, 100 KB

2011

2

Investigation of Strain Engineering in FinFETs Comprising Experimental Analysis and Numerical Simulations

Conzatti, F., Serra, N., Esseni, D., De Michielis, M., Paussa, A., Palestri, P., Selmi, L., Thomas, S.M., Whall, T.E., Leadley, D., Parker, E.H.C., Witters, L., Hytch, M.J., Snoeck, E., Wang, T.J., Le

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 930 KB

english, 2011

3

Fabrication and Characterization of an Epitaxial Graphene Nanoribbon-Based Field-Effect Transistor

Nan Meng, Fernandez, J.F., Vignaud, D., Dambrine, G., Happy, H.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 332 KB

english, 2011

4

A Physics-Based Analytical Compact Model for the Drift Region of the HV-MOSFET

Bazigos, A., Krummenacher, F., Sallese, J.-M., Bucher, M., Seebacher, E., Posch, W., Molnár, K., Mingchun Tang

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 469 KB

english, 2011

5

TaN and Sidewall Gate-Etch Damage Influence on Program, Erase, and Retention of Sub-50-nm TANOS nand Flash Memory Cells

Beug, M.F., Melde, T., Paul, J., Knoefler, R.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 790 KB

english, 2011

6

Single-ZnO-Nanowire Memory

Yen-De Chiang, Wen-Yuan Chang, Ching-Yuan Ho, Cheng-Ying Chen, Chih-Hsiang Ho, Su-Jien Lin, Tai-Bor Wu, Jr-Hau He

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 606 KB

english, 2011

7

Avalanche Gain and Energy Resolution of Semiconductor X-ray Detectors

Chee Hing Tan, Gomes, R.B., David, J.P.R., Barnett, A.M., Bassford, D.J., Lees, J.E., Jo Shien Ng

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 297 KB

english, 2011

8

Extended Quantum Correction Model Applied to Six-Band Valence Bands Near Silicon/Oxide Interfaces

Penzin, O., Paasch, G., Heinz, F.O., Smith, L.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 460 KB

english, 2011

9

Toward System on Chip (SoC) Development Using FinFET Technology: Challenges, Solutions, Process Co-Development & Optimization Guidelines

Shrivastava, M., Mehta, R., Gupta, S., Agrawal, N., Baghini, M.S., Sharma, D.K., Schulz, T., Arnim, K., Molzer, W., Gossner, H., Rao, V.R.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 2.46 MB

english, 2011

10

A Novel Low-Voltage Low-Power Programming Method for NAND Flash Cell by Utilizing Self-Boosting Channel Potential for Carrier Heating

Wen-Jer Tsai, Huang, J.S., Ping-Hung Tsai, Yan, S.G., Cheng-Hsien Cheng, Cheng, C.C., Yin-Jen Chen, Chih-Hsiung Lee, Tzung-Ting Han, Tao-Cheng Lu, Kuang-Chao Chen, Chih-Yuan Lu

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.53 MB

english, 2011

11

Analysis of GIDL-Induced off-State Breakdown in High-Voltage Depletion-Mode nMOSFETs

Chen, J.F., Chin-Rung Yan, Yin-Chia Lin, Jhen-Jhih Fan, Sheng-Fu Yang, Wen-Chieh Shih

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 941 KB

english, 2011

12

Efficient Time-Domain Simulations of a Helix Traveling-Wave Tube

Bernardi, P., Andre, F., David, J.-F., Le Clair, A., Doveil, F.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 237 KB

english, 2011

13

Study of Trap Models Related to the Variable Retention Time Phenomenon in DRAM

Heesang Kim, Byoungchan Oh, Younghwan Son, Kyungdo Kim, Seon-Yong Cha, Jae-Goan Jeong, Sung-Joo Hong, Hyungcheol Shin

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 594 KB

english, 2011

14

Scaling SOI MESFETs to 150-nm CMOS Technologies

Lepkowski, W., Ghajar, M.R., Wilk, S.J., Summers, N., Thornton, T.J., Fechner, P.S.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 897 KB

english, 2011

15

Bistable Nonvolatile Elastic-Membrane Memcapacitor Exhibiting a Chaotic Behavior

Martinez-Rincon, J., Pershin, Y.V.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 397 KB

english, 2011

16

Characterization of an Oxide Trap Leading to Random Telegraph Noise in Gate-Induced Drain Leakage Current of DRAM Cell Transistors

Byoungchan Oh, Heung-Jae Cho, Heesang Kim, Younghwan Son, Taewook Kang, Sunyoung Park, Seunghyun Jang, Jong-Ho Lee, Hyungcheol Shin

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 690 KB

english, 2011

17

Characteristics of Interface Properties for CMOS Fabricated on Hybrid Orientation Substrate Using Amorphization/Templated Recrystallization (ATR) Method

Po Chin Huang, San Lein Wu, Shoou Jinn Chang, Yao Tsung Huang, Chen, J.F., Chien Ting Lin, Ma, M., Cheng, O.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.27 MB

english, 2011

18

Demonstration of a 100-kW Solenoidally Focused Sheet Electron Beam for Millimeter-Wave Amplifiers

Pasour, J., Nguyen, K., Wright, E., Balkcum, A., Atkinson, J., Cusick, M., Levush, B.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 881 KB

english, 2011

19

Design and Characterization of Current-Assisted Photonic Demodulators in 0.18- CMOS Technology

Betta, G.D., Donati, S., Hossain, Q.D., Martini, G., Pancheri, L., Saguatti, D., Stoppa, D., Verzellesi, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 469 KB

english, 2011

20

Thin-BOX Poly-Si Thin-Film Transistors for CMOS-Compatible Analog Operations

Soo Youn Kim, Baytok, S., Roy, K.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 795 KB

english, 2011

21

Design of an RF Transmit/Receive Switch Using LDMOSFETs With High Power Capability and Low Insertion Loss

Chih-Min Hu, Chung-Yu Hung, Chun-Hsueh Chu, Da-Chiang Chang, Chih-Fang Huang, Jeng Gong, Ching-Yu Chen

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 379 KB

english, 2011

22

30-nm Tunnel FET With Improved Performance and Reduced Ambipolar Current

Anghel, C., Hraziia, Gupta, A., Amara, A., Vladimirescu, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 595 KB

english, 2011

23

Predistortion Linearization of an X-Band TWTA for Communications Applications

Xin Hu, Gang Wang, Zi-Cheng Wang, Ji-Run Luo

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 460 KB

english, 2011

24

Uniform High-Current Cathodes Using Massive Arrays of Si Field Emitters Individually Controlled by Vertical Si Ungated FETs—Part 1: Device Design and Simulation

Velasquez-Garcia, L.F., Guerrera, S.A., Ying Niu, Akinwande, A.I.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 952 KB

english, 2011

25

Uniform High-Current Cathodes Using Massive Arrays of Si Field Emitters Individually Controlled by Vertical Si Ungated FETs—Part 2: Device Fabrication and Characterization

Velasquez-Garcia, L.F., Guerrera, S.A., Niu, Y., Akinwande, A.I.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.12 MB

english, 2011

26

Design and Optimization of Superjunction Collectors for Use in High-Speed SiGe HBTs

Jiahui Yuan, Cressler, J.D.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.36 MB

english, 2011

27

Temperature Dependence of the Transconductance in Ballistic III–V QWFETs

Yang Liu, Luisier, M., Lundstrom, M.S.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 538 KB

english, 2011

28

Statistical Model of Line-Edge and Line-Width Roughness for Device Variability Analysis

Hiraiwa, A., Nishida, A., Mogami, T.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 456 KB

english, 2011

29

Effects of Barrier Thinning on Small-Signal and 30-GHz Power Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors

Higashiwaki, M., Yi Pei, Rongming Chu, Mishra, U.K.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 493 KB

english, 2011

30

An Efficient Robust Algorithm for the Surface-Potential Calculation of Independent DG MOSFET

Jandhyala, S., Mahapatra, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 709 KB

english, 2011

31

Comparison of Methods to Bias Fully Depleted SOI-Based MOSFET Nanoribbon pH Sensors

Chapman, R.A., Fernandes, P.G., Seitz, O., Stiegler, H.J., Huang-Chun Wen, Chabal, Y.J., Vogel, E.M.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.25 MB

english, 2011

32

High- Gate Stack Properties in SON Transistor Given by Voltage and Temperature Dependence of Random Telegraph Signal

Trabelsi, M., Militaru, L., Savio, A., Monfray, S., Souifi, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 452 KB

english, 2011

33

Characteristic Degradation of Poly-Si Thin-Film Transistors With Large Grains From the Viewpoint of Grain Boundary Location

Kimura, M., Dimitriadis, C.A.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 514 KB

english, 2011

34

Table of contents

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 66 KB

english, 2011

35

IEEE Transactions on Electron Devices information for authors

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 31 KB

english, 2011

36

IEEE Transactions on Electron Devices publication information

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 52 KB

english, 2011

37

42nd IEEE Semiconductor Interface Specialists Conference

Journal:

IEEE Transactions on Electron Devices

Year:

2011

File:

PDF, 609 KB

2011

38

2011 IEEE International Electron Devices Meeting (IEDM)

Journal:

IEEE Transactions on Electron Devices

Year:

2011

File:

PDF, 840 KB

2011

39

International Conference on Enabling Science and Nanotechnology (ESciNano)

Journal:

IEEE Transactions on Electron Devices

Year:

2011

File:

PDF, 1.49 MB

2011

40

Blank page [back cover]

Journal:

IEEE Transactions on Electron Devices

Year:

2011

File:

PDF, 5 KB

2011

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