Power Enhancement of 410-nm InGaN-Based Light-Emitting...

IEEE Transactions on Electron Devices 2011 Vol. 58; Iss. 11

Power Enhancement of 410-nm InGaN-Based Light-Emitting Diodes on Selectively Etched GaN/Sapphire Templates

Tsung-Yen Tsai, Dong-Sing Wuu, Ming-Tsung Hung, Jen-Hung Tu, Shih-Cheng Huang, Horng, R.-H., Wei-Yang Chiang, Li-Wei Tu
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Volume:
58
Year:
2011
Language:
english
Pages:
8
DOI:
10.1109/ted.2011.2164077
File:
PDF, 1.14 MB
english, 2011
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