Volume 58; Issue 11

IEEE Transactions on Electron Devices

Volume 58; Issue 11

1

Effect of Solvent Annealing in the Presence of Electric Field on P3HT:PCBM Films Used in Organic Solar Cells

Bagui, A., Iyer, S.S.K.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 774 KB

english, 2011

2

Explicit Drain-Current Model of Graphene Field-Effect Transistors Targeting Analog and Radio-Frequency Applications

Jimenez, D., Moldovan, O.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 386 KB

english, 2011

3

Long Wavelength Multiple Resonant Cavities RCE Photodetectors on GaAs Substrates

Xiaofeng Duan, Yongqing Huang, Xiaomin Ren, Wei Wang, Hui Huang, Qi Wang, Shiwei Cai

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 647 KB

english, 2011

4

An Extraction Method of the Energy Distribution of Interface Traps by an Optically Assisted Charge Pumping Technique

Sungho Kim, Sung-Jin Choi, Dong-Il Moon, Yang-Kyu Choi

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 690 KB

english, 2011

5

Control of the Reflections at the Terminations of a Slow Wave Structure in the Nonstationary Discrete Theory of Excitation of a Periodic Waveguide

Bernardi, P., Andre, F., David, J.-F., Le Clair, A., Doveil, F.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 480 KB

english, 2011

6

Analytical Solution of Joule-Heating Equation for Metallic Single-Walled Carbon Nanotube Interconnects

Verma, R., Bhattacharya, S., Mahapatra, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 207 KB

english, 2011

7

Physical and Electrical Performance Limits of High-Speed Si GeC HBTs—Part II: Lateral Scaling

Schroter, M., Krause, J., Rinaldi, N., Wedel, G., Heinemann, B., Chevalier, P., Chantre, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 848 KB

english, 2011

8

An Analytical Model for Line-Edge Roughness Limited Mobility of Graphene Nanoribbons

Goharrizi, A.Y., Pourfath, M., Fathipour, M., Kosina, H., Selberherr, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.14 MB

english, 2011

9

Monolithic 3-D Integration of SRAM and Image Sensor Using Two Layers of Single-Grain Silicon

Derakhshandeh, J., Golshani, N., Ishihara, R., Tajari Mofrad, M.R., Robertson, M., Morrison, T., Beenakker, C.I.M.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.30 MB

english, 2011

10

Band Alignment and Performance Improvement Mechanisms of Chlorine-Treated ZnO-Gate AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistors

Ya-Lan Chiou, Ching-Ting Lee

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.01 MB

english, 2011

11

Physical and Electrical Performance Limits of High-Speed SiGeC HBTs—Part I: Vertical Scaling

Schroter, M., Wedel, G., Heinemann, B., Jungemann, C., Krause, J., Chevalier, P., Chantre, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 923 KB

english, 2011

12

Substrate Gating of Contact Resistance in Graphene Transistors

Berdebes, D., Low, T., Yang Sui, Appenzeller, J., Lundstrom, M.S.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 651 KB

english, 2011

13

Degradation Analysis of p-Type Poly-Si Thin-Film Transistors Using Device Simulation

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 699 KB

english, 2011

14

TiN Metal Gate Electrode Thickness Effect on BTI and Dielectric Breakdown in HfSiON-Based MOSFETs

Chien-Liang Chen, Ya-Chin King

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1011 KB

english, 2011

15

Electrical Performance Optimization of Nanoscale Double-Gate MOSFETs Using Multiobjective Genetic Algorithms

Bendib, T., Djeffal, F.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 486 KB

english, 2011

16

A Novel Nanoinjection Lithography (NInL) Technology and Its Application for 16-nm Node Device Fabrication

Hou-Yu Chen, Chun-Chi Chen, Fu-Kuo Hsueh, Jan-Tsai Liu, Shyi-Long Shy, Cheng-San Wu, Chao-Hsin Chien, Chenming Hu, Chien-Chao Huang, Fu-Liang Yang

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.04 MB

english, 2011

17

Gate-First Metal-Gate/High- n-MOSFETs With Deep Sub-nm Equivalent Oxide Thickness (0.58 nm) Fabricated With Sulfur-Implanted Schottky Source/Drain Using a Low-Temperature Process

Suzuki, M., Nishi, Y., Kinoshita, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 230 KB

english, 2011

18

Power Enhancement of 410-nm InGaN-Based Light-Emitting Diodes on Selectively Etched GaN/Sapphire Templates

Tsung-Yen Tsai, Dong-Sing Wuu, Ming-Tsung Hung, Jen-Hung Tu, Shih-Cheng Huang, Horng, R.-H., Wei-Yang Chiang, Li-Wei Tu

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.14 MB

english, 2011

19

N-Type Porous Silicon Substrates for Integrated RF Inductors

Capelle, M., Billoue, J., Poveda, P., Gautier, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 375 KB

english, 2011

20

Extended Analysis of Capacitance–Voltage Curves for the Determination of Bulk Dopant Concentrations of Textured Silicon Solar Cells

Schütze, M., Hinken, D., Milsted, A., Koentopp, M.B., Bothe, K.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 920 KB

english, 2011

21

An Adjusted Constant-Current Method to Determine Saturated and Linear Mode Threshold Voltage of MOSFETs

Bazigos, A., Bucher, M., Assenmacher, J., Decker, S., Grabinski, W., Papananos, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 269 KB

english, 2011

22

UIS Analysis and Characterization of the Inverted L-Shaped Source Trench Power MOSFET

Ng, J.C.W., Sin, J.K.O., Sumida, H., Toyoda, Y., Ohi, A., Tanaka, H., Nishimura, T., Ueno, K.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 416 KB

english, 2011

23

Nanoscale Characterization of Gate Leakage in Strained High-Mobility Devices

Kapoor, R., Escobedo-Cousin, E., Olsen, S.H., Bull, S.J.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 866 KB

english, 2011

24

Read Characteristics of Independent Double-Gate Poly-Si Nanowire SONOS Devices

Horng-Chih Lin, Zer-Ming Lin, Wei-Chen Chen, Tiao-Yuan Huang

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 863 KB

english, 2011

25

Endurance Characteristics of Amorphous-InGaZnO Transparent Flash Memory With Gold Nanocrystal Storage Layer

Jaeman Jang, Jae Chul Park, Dongsik Kong, Kim, D.M., Jang-Sik Lee, Byeong-Hyeok Sohn, Il Hwan Cho, Dae Hwan Kim

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.40 MB

english, 2011

26

Inelastic Phonon Scattering in Graphene FETs

Chauhan, J., Jing Guo

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 692 KB

english, 2011

27

Carrier Dynamics Investigation on Passivation Dielectric Constant and RF Performance of Millimeter-Wave Power GaN HEMTs

Guerra, D., Saraniti, M., Ferry, D.K., Goodnick, S.M., Marino, F.A.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.18 MB

english, 2011

28

White-Light Electroluminescence From n-ZnO/p-GaN Heterojunction Light-Emitting Diodes at Reverse Breakdown Bias

Chen, H.C., Chen, M.J., Huang, Y.H., Sun, W.C., Li, W.C., Yang, J.R., Kuan, H., Shiojiri, M.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 311 KB

english, 2011

29

The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps

Grasser, T., Kaczer, B., Goes, W., Reisinger, H., Aichinger, T., Hehenberger, P., Wagner, P., Schanovsky, F., Franco, J., Luque, M.T., Nelhiebel, M.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 2.35 MB

english, 2011

30

Electrical Characteristics of Ultrathin Atomic Layer Deposited and Stacked Dielectrics on -Treated InP

Ming-Kwei Lee, Chih-Feng Yen, Sheng-Hsiung Yang

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 280 KB

english, 2011

31

Perturbation Theory for Solar Cell Efficiency I—Basic Principles

Wong, J., Green, M.A.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 150 KB

english, 2011

32

Nanoscale Bipolar and Complementary Resistive Switching Memory Based on Amorphous Carbon

Yang Chai, Yi Wu, Takei, K., Hong-Yu Chen, Shimeng Yu, Chan, P.C.H., Javey, A., Wong, H.-S.P.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 588 KB

english, 2011

33

Scaling Between Channel Mobility and Interface State Density in SiC MOSFETs

Rozen, J., Ahyi, A.C., Xingguang Zhu, Williams, J.R., Feldman, L.C.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 359 KB

english, 2011

34

NiGe Contacts and Junction Architectures for P and As Doped Germanium Devices

Shayesteh, M., Daunt, C.L.L.M., O'Connell, D., Djara, V., White, M., Long, B., Duffy, R.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 594 KB

english, 2011

35

Piezoresistive Strain Sensors and Multiplexed Arrays Using Assemblies of Single-Crystalline Silicon Nanoribbons on Plastic Substrates

Sang Min Won, Hoon-Sik Kim, Nanshu Lu, Dae-Gon Kim, Del Solar, C., Duenas, T., Ameen, A., Rogers, J.A.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 504 KB

english, 2011

36

Analysis of the Correlation Between the Programmed Threshold-Voltage Distribution Spread of nand Flash Memory Devices and Floating-Gate Impurity Concentration

Shirota, R., Sakamoto, Y., Hung-Ming Hsueh, Jian-Ming Jaw, Wen-Chuan Chao, Chih-Ming Chao, Sheng-Fu Yang, Arakawa, H.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 312 KB

english, 2011

37

A Cost-Effective Metal–Insulator–Metal Capacitor Processed at 300 Using Laser Annealing and a Fully Silicided Amorphous Silicon Bottom Electrode

Jung-Hsiang Lee, Yi-Chang Lin, Ming-Yu Chen

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 390 KB

english, 2011

38

Effects of Channel Width and Nitride Passivation Layer on Electrical Characteristics of Polysilicon Thin-Film Transistors

Chia-Chun Liao, Min-Chen Lin, Tsung-Yu Chiang, Tien-Sheng Chao

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.02 MB

english, 2011

39

Uniaxial Strain Effects on Electron Ballistic Transport in Gate-All-Around Silicon Nanowire MOSFETs

Lining Zhang, Haijun Lou, Jin He, Mansun Chan

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 895 KB

english, 2011

40

Narrow-Width Effects on a Body-Tied Partially Depleted SOI MOSFET

Valentin, R., Bertrand, G., Puget, S., Scheer, P., Juge, A., Jaouen, H., Raynaud, C.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 937 KB

english, 2011

41

Microfabrication and Characterization of W-Band Planar Helix Slow-Wave Structure With Straight-Edge Connections

Ciersiang Chua, Tsai, J.M., Aditya, S., Min Tang, Soon Wee Ho, Zhongxiang Shen, Lei Wang

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 854 KB

english, 2011

42

Metal–Oxide–High- -Oxide–Silicon Memory Device Using a Ti-Doped Charge-Trapping Layer and Blocking Layer

Fa-Hsyang Chen, Tung-Ming Pan, Fu-Chien Chiu

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 595 KB

english, 2011

43

Three-Dimensional Integration Approach to High-Density Memory Devices

Hojung Kim, Sanghun Jeon, Myoung-Jae Lee, Jaechul Park, Sangbeom Kang, Hyun-Sik Choi, Churoo Park, Hong-Sun Hwang, Changjung Kim, Jaikwang Shin, U-In Chung

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.08 MB

english, 2011

44

Gauge Factor Tuning, Long-Term Stability, and Miniaturization of Nanoelectromechanical Carbon-Nanotube Sensors

Helbling, T., Roman, C., Durrer, L., Stampfer, C., Hierold, C.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 749 KB

english, 2011

45

Modeling Quantum Efficiency of Ultraviolet 6H–SiC Photodiodes

Panferov, A., Kurinec, S.K.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 367 KB

english, 2011

46

Performance of GaAs/Mirror/Cu-Substrate Thin-Film Solar Cells

Ming-Chun Tseng, Ray-Hua Horng, Fan-Lei Wu, Chih-Hung Wu, Min-De Yang

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 713 KB

english, 2011

47

A Statistical Model of Erratic Behaviors in Flash Memory Arrays

Chimenton, A., Zambelli, C., Olivo, P.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 187 KB

english, 2011

48

An Analytical Approach for Obtaining User-Defined Axial Magnetic Field Profile of a PPM Focusing Structure

Santra, M., Kumar, L., Balakrishnan, J.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 339 KB

english, 2011

49

Modeling of SOI-LDMOS Transistor Including Impact Ionization, Snapback, and Self-Heating

Radhakrishna, U., DasGupta, A., DasGupta, N., Chakravorty, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 324 KB

english, 2011

50

A Combined Interface and Border Trap Model for High-Mobility Substrate Metal–Oxide–Semiconductor Devices Applied to and InP Capacitors

Brammertz, G., Alian, A., Lin, D.H.-C., Meuris, M., Caymax, M., Wang, W.-E.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.03 MB

english, 2011

51

Understanding the Charge Transport Mechanism in VRS and BRS States of Transition Metal Oxide Nanoelectronic Memristor Devices

Long, B., Ordosgoitti, J., Jha, R., Melkonian, C.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1008 KB

english, 2011

52

Comparative Analysis of Temperature-Dependent Electrical and Dielectric Properties of an Schottky Device at Two Frequencies

Dokme, I., Altindal, S.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 711 KB

english, 2011

53

Evaluation of Lateral Power MOSFETs in a Synchronous Buck Converter Using a Mixed-Mode Device and Circuit Simulation

Boyi Yang, Jiann-Shiun Yuan, Shen, Z.J.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 901 KB

english, 2011

54

Contact-Resistance Reduction for Strained n-FinFETs With Silicon–Carbon Source/Drain and Platinum-Based Silicide Contacts Featuring Tellurium Implantation and Segregation

Shao-Ming Koh, Kong, E.Y.-J., Bin Liu, Chee-Mang Ng, Samudra, G.S., Yee-Chia Yeo

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.47 MB

english, 2011

55

Dependence of the Property of InGaN p-i-n Solar Cells on the Light Concentration and Temperature

Xiao-Mei Cai, Sheng-Wei Zeng, Xin Li, Jiang-Yong Zhang, Shuo Lin, An-Kai Lin, Ming Chen, Wen-Jie Liu, Shao-Xiong Wu, Bao-Ping Zhang

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 761 KB

english, 2011

56

Compact Modeling and Analysis of Through-Si-Via-Induced Electrical Noise Coupling in Three-Dimensional ICs

Chuan Xu, Suaya, R., Banerjee, K.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.31 MB

english, 2011

57

Hydrogen-Sensing Characteristics of a Pd/GaN Schottky Diode With a Simple Surface Roughness Approach

Tai-You Chen, Huey-Ing Chen, Chien-Chang Huang, Chi-Shiang Hsu, Po-Shun Chiu, Po-Cheng Chou, Rong-Chau Liu, Wen-Chau Liu

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 529 KB

english, 2011

58

Mechanism of Contact Resistance Reduction in Nickel Silicide Films by Pt Incorporation

Sonehara, T., Hokazono, A., Akutsu, H., Sasaki, T., Uchida, H., Tomita, M., Kawanaka, S., Inaba, S., Toyoshima, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.80 MB

english, 2011

59

Fabrication of a Fractional Order Capacitor With Desired Specifications: A Study on Process Identification and Characterization

Sivarama Krishna, M., Das, S., Biswas, K., Goswami, B.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 540 KB

english, 2011

60

Highly Manufacturable Device Isolation Technology Using Laser-Induced Epitaxial Growth for Monolithic Stack Devices

Yong-Hoon Son, Seung Jae Baik, Sanghun Jeon, Jong-Wook Lee, Gihyun Hwang, Yoo Gyun Shin, Euijoon Yoon

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 645 KB

english, 2011

61

Table of contents

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 71 KB

english, 2011

62

Improvement in off-State Leakage Current of n-Channel SOS MOSFETs by Hydrogen Annealing of the SOS Film

Domyo, H., Imthurn, G., Tran Ho, Miscione, A.M., Rakic, A.D., Yew-Tong Yeow

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 273 KB

english, 2011

63

Blank page [back cover]

Journal:

IEEE Transactions on Electron Devices

Year:

2011

File:

PDF, 5 KB

2011

64

IEEE Transactions on Electron Devices information for authors

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 31 KB

english, 2011

65

IEEE Transactions on Electron Devices publication information

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 52 KB

english, 2011

66

2012 IEEE International Reliabilty Physics Symposium (IRPS)

Journal:

IEEE Transactions on Electron Devices

Year:

2011

File:

PDF, 725 KB

2011

67

2011 IEEE International Electron Devices Meeting (IEDM)

Journal:

IEEE Transactions on Electron Devices

Year:

2011

File:

PDF, 325 KB

2011

68

On-Chip High-Performance Millimeter-Wave Transmission Lines on Locally Grown Porous Silicon Areas

Issa, H., Ferrari, P., Hourdakis, E., Nassiopoulou, A.G.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 652 KB

english, 2011

69

Tri-Mode Independent-Gate FinFETs for Dynamic Voltage/Frequency Scalable 6T SRAMs

Gupta, S.K., Park, S.P., Roy, K.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.11 MB

english, 2011

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