Voltage Snapback in Amorphous-GST Memory Devices: Transport...

IEEE Transactions on Electron Devices 2011 Vol. 58; Iss. 12

Voltage Snapback in Amorphous-GST Memory Devices: Transport Model and Validation

Rudan, M., Giovanardi, F., Piccinini, E., Buscemi, F., Brunetti, R., Jacoboni, C.
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Volume:
58
Year:
2011
Language:
english
Pages:
9
DOI:
10.1109/ted.2011.2168402
File:
PDF, 316 KB
english, 2011
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