Volume 58; Issue 12

IEEE Transactions on Electron Devices

Volume 58; Issue 12

1

An Extended CMOS ISFET Model Incorporating the Physical Design Geometry and the Effects on Performance and Offset Variation

Yan Liu, Georgiou, P., Prodromakis, T., Constandinou, T.G., Toumazou, C.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1006 KB

english, 2011

2

Explicit Drain Current, Charge and Capacitance Model of Graphene Field-Effect Transistors

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 604 KB

english, 2011

3

Characterization of AlGaN/GaN HFET With p-Type Body Layer

Cheng-Yu Hu, Kikuta, D., Sugimoto, M., Jin-Ping Ao, Ohno, Y.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 711 KB

english, 2011

4

Shear Piezoresistance in MOSFET Devices Under General Operating Conditions

Sbierski, B., Gieschke, P., Paul, O.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 384 KB

english, 2011

5

Sb-rich Si–Sb–Te Phase-Change Material for Phase-Change Random Access Memory Applications

Liangcai Wu, Xilin Zhou, Zhitang Song, Min Zhu, Yan Cheng, Feng Rao, Sannian Song, Bo Liu, Songlin Feng

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 598 KB

english, 2011

6

Enhanced Temperature Dependence of Phonon-Scattering-Limited Mobility in Compressively Uniaxial Strained pMOSFETs

Chen, W.P.-N., Kuo, J.J.-Y., Pin Su

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 364 KB

english, 2011

7

Ammonia Sensing Characteristics of Sputtered Indium Tin Oxide (ITO) Thin Films on Quartz and Sapphire Substrates

Cheng-Wei Lin, Huey-Ing Chen, Tai-You Chen, Chien-Chang Huang, Chi-Shiang Hsu, Wen-Chau Liu

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 598 KB

english, 2011

8

A Theoretical Calculation of the Impact of GaN Cap and Barrier Thickness Fluctuations on Two-Dimensional Electron Gas in a Heterostructure

Guipeng Liu, Ju Wu, Yanwu Lu, Biao Zhang, Chengming Li, Ling Sang, Yafeng Song, Kai Shi, Xianglin Liu, Shaoyan Yang, Qinsheng Zhu, Zhanguo Wang

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 134 KB

english, 2011

9

Analyses on Small-Signal Parameters and Radio-Frequency Modeling of Gate-All-Around Tunneling Field-Effect Transistors

Seongjae Cho, Jae Sung Lee, Kyung Rok Kim, Byung-Gook Park, Harris, J.S., In Man Kang

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.03 MB

english, 2011

10

Comparative Simulation Study of the Different Sources of Statistical Variability in Contemporary Floating-Gate Nonvolatile Memory

Roy, G., Ghetti, A., Benvenuti, A., Erlebach, A., Asenov, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 634 KB

english, 2011

11

Novel Oxide-Passivated AlGaN/GaN HEMT by Using Hydrogen Peroxide Treatment

Han-Yin Liu, Bo-Yi Chou, Wei-Chou Hsu, Ching-Sung Lee, Chiu-Sheng Ho

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 449 KB

english, 2011

12

Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 823 KB

english, 2011

13

Comprehensive Temperature-Dependent Studies of Metamorphic High Electron Mobility Transistors With Double and Single -Doped Structures

Chien-Chang Huang, Tai-You Chen, Chi-Shiang Hsu, Chun-Chia Chen, Chung-I Kao, Wen-Chau Liu

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 320 KB

english, 2011

14

Low Frequency Noise in Strained Si Heterojunction Bipolar Transistors

Fjer, M., Persson, S., Escobedo-Cousin, E., O'Neill, A.G.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 766 KB

english, 2011

15

Conduction Mechanisms and Low-Temperature Anomalies in the Electrical Characteristics of Ga– —A Liquid Metal Schottky Structure

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 645 KB

english, 2011

16

On the MOSFET Threshold Voltage Extraction by Transconductance and Transconductance-to-Current Ratio Change Methods: Part I—Effect of Gate-Voltage-Dependent Mobility

Rudenko, T., Kilchytska, V., Arshad, M.K.M., Raskin, J.-P., Nazarov, A., Flandre, D.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 561 KB

english, 2011

17

On the MOSFET Threshold Voltage Extraction by Transconductance and Transconductance-to-Current Ratio Change Methods: Part II—Effect of Drain Voltage

Rudenko, T., Kilchytska, V., Arshad, M.K.M., Raskin, J.-P., Nazarov, A., Flandre, D.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 789 KB

english, 2011

18

Variable Ramp Rate Breakdown Experiments and the Role of Metal Injection in Low- Dielectrics

Plawsky, J.L., Borja, J., Williams, B., Riley, M.J., Gill, W.N.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 415 KB

english, 2011

19

High-Density Three-Dimensional Stacked nand Flash With Common Gate Structure and Shield Layer

Min-Kyu Jeong, Sung-Min Joe, Hyungcheol Shin, Byung-Gook Park, Jong-Ho Lee

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 928 KB

english, 2011

20

Voltage Snapback in Amorphous-GST Memory Devices: Transport Model and Validation

Rudan, M., Giovanardi, F., Piccinini, E., Buscemi, F., Brunetti, R., Jacoboni, C.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 316 KB

english, 2011

21

Double-Heterostructure Detector With Three Ultraviolet Spectral Band Responses

Bo Gao, Hongxia Liu, Jinbin Fan, Shulong Wang

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 293 KB

english, 2011

22

Analytical Expressions for Doped Polycrystalline Silicon Thin-Film Transistors in Above-Threshold Regime Consistent With Pao–Sah Model Considering Trapped Charge Effect

Hongyu He, Xueren Zheng

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 276 KB

english, 2011

23

In-Depth Study of Quantum Effects in SOI DGMOSFETs for Different Crystallographic Orientations

Balaguer, M., Aranda, J.B.R., Gamiz, F.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 328 KB

english, 2011

24

Electrical Properties and Stability of Dual-Gate Coplanar Homojunction DC Sputtered Amorphous Indium–Gallium–Zinc–Oxide Thin-Film Transistors and Its Application to AM-OLEDs

Gwanghyeon Baek, Abe, K., Kuo, A., Kumomi, H., Kanicki, J.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 752 KB

english, 2011

25

Capacitance Compact Model for Ultrathin Low-Electron-Effective-Mass Materials

Mudanai, S., Roy, A., Kotlyar, R., Rakshit, T., Stettler, M.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 207 KB

english, 2011

26

Double-Halo Field-Effect Transistor—A Multifunction Device to Sustain the Speed and Density Rate of Modern Integrated Circuits

Marino, F.A., Meneghesso, G.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 632 KB

english, 2011

27

Effects of High Electric Fields on Tunneling-Assisted Optical Electron Transitions in a-Si

Pirc, M., Furlan, J.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 180 KB

english, 2011

28

Self-Annealing Effect of Tensile Liner on Thick-Tinv PMOS

Qintao Zhang, Jie Chen, Sherony, M.J.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 812 KB

english, 2011

29

Polymer Solid-Electrolyte Switch Embedded on CMOS for Nonvolatile Crossbar Switch

Tada, M., Okamoto, K., Sakamoto, T., Miyamura, M., Banno, N., Hada, H.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.25 MB

english, 2011

30

Improved Calculation of Charge Collection Probability From Within the Junction Well

Ong, V.K.S., Tan, C.C., Kurniawan, O., Radhakrishnan, K.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 252 KB

english, 2011

31

Fabrication of a Contact on ZnO Films With High Thermal Stability and Low Resistance

Chai, J.W., Yang, M., Chi, D.Z., Ong, J.L.T., Wang, S.J., Zhang, Z., Pan, J.S., Feng, Y.P., Chua, S.J.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 359 KB

english, 2011

32

A Full-Range Drain Current Model for Double-Gate Junctionless Transistors

Duarte, J.P., Sung-Jin Choi, Yang-Kyu Choi

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.03 MB

english, 2011

33

Nonlinear Steady-State III–V FET Model for Microwave Antenna Switch Applications

Takatani, S., Cheng-Duan Chen

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 789 KB

english, 2011

34

Drain-Dependence of Tunnel Field-Effect Transistor Characteristics: The Role of the Channel

Mallik, A., Chattopadhyay, A.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.06 MB

english, 2011

35

Fluorinated as Charge-Trapping Layer for Nonvolatile Memory Applications

Huang, X.D., Sin, J.K.O., Lai, P.T.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 871 KB

english, 2011

36

Asymmetrically Doped FinFETs for Low-Power Robust SRAMs

Moradi, F., Gupta, S.K., Panagopoulos, G., Wisland, D.T., Mahmoodi, H., Roy, K.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.21 MB

english, 2011

37

Investigation of Trap Spacing for the Amorphous State of Phase-Change Memory Devices

Jeyasingh, R.G.D., Kuzum, D., Wong, H.-S.P.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 836 KB

english, 2011

38

Design Space Exploration of Typical STT MTJ Stacks in Memory Arrays in the Presence of Variability and Disturbances

Augustine, C., Raychowdhury, A., Somasekhar, D., Tschanz, J., De, V., Roy, K.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.67 MB

english, 2011

39

Epitaxial ALD BeO: Efficient Oxygen Diffusion Barrier for EOT Scaling and Reliability Improvement

Jung Hwan Yum, Bersuker, G., Akyol, T., Ferrer, D.A., Lei, M., Keun Woo Park, Hudnall, T.W., Downer, M.C., Bielawski, C.W., Yu, E.T., Price, J., Lee, J.C., Banerjee, S.K.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.54 MB

english, 2011

40

Ultrawide Frequency Range Crosstalk Into Standard and Trap-Rich High Resistivity Silicon Substrates

Ben Ali, K., Roda Neve, C., Gharsallah, A., Raskin, J.-P.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 952 KB

english, 2011

41

Investigation of Tunneling Current in Gate Stacks for Flash Memory Applications

Chakrabarti, B., Heesoo Kang, Brennan, B., Tae Joo Park, Cantley, K.D., Pirkle, A., McDonnell, S., Jiyoung Kim, Wallace, R.M., Vogel, E.M.

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 831 KB

english, 2011

42

2011 Golden List

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 116 KB

english, 2011

43

Kudos to Our Reviewers

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 19 KB

english, 2011

44

Table of contents

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 62 KB

english, 2011

45

Confidentiality of the Review Process

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 18 KB

english, 2011

46

Blank page [back cover]

Journal:

IEEE Transactions on Electron Devices

Year:

2011

File:

PDF, 5 KB

2011

47

IEEE Transactions on Electron Devices information for authors

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 31 KB

english, 2011

48

IEEE Transactions on Electron Devices publication information

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 52 KB

english, 2011

49

2011 Index IEEE Transactions on Electron Devices Vol. 58

Journal:

IEEE Transactions on Electron Devices

Year:

2011

Language:

english

File:

PDF, 1.09 MB

english, 2011

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