In-Depth Study of Quantum Effects in SOI DGMOSFETs for...

IEEE Transactions on Electron Devices 2011 Vol. 58; Iss. 12

In-Depth Study of Quantum Effects in SOI DGMOSFETs for Different Crystallographic Orientations

Balaguer, M., Aranda, J.B.R., Gamiz, F.
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Volume:
58
Year:
2011
Language:
english
Pages:
4
DOI:
10.1109/ted.2011.2168405
File:
PDF, 328 KB
english, 2011
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