Investigation of Tunneling Current in Gate Stacks for...

IEEE Transactions on Electron Devices 2011 Vol. 58; Iss. 12

Investigation of Tunneling Current in Gate Stacks for Flash Memory Applications

Chakrabarti, B., Heesoo Kang, Brennan, B., Tae Joo Park, Cantley, K.D., Pirkle, A., McDonnell, S., Jiyoung Kim, Wallace, R.M., Vogel, E.M.
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Volume:
58
Year:
2011
Language:
english
Pages:
7
DOI:
10.1109/ted.2011.2170198
File:
PDF, 831 KB
english, 2011
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