The Effect of Operating Frequency in the Radiation Induced...

IEEE Transactions on Nuclear Science 1985 Vol. 32; Iss. 6

The Effect of Operating Frequency in the Radiation Induced Buildup of Trapped Holes and Interface States in MOS Devices

Stanley, T., Neamen, D., Dressendorfer, P., Schwank, J., Winokur, P., Ackermann, M., Jungling, K., Hawkins, C., Grannemann, W.
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Volume:
32
Year:
1985
Language:
english
Pages:
6
DOI:
10.1109/tns.1985.4334054
File:
PDF, 1.11 MB
english, 1985
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