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The Effect of Operating Frequency in the Radiation Induced Buildup of Trapped Holes and Interface States in MOS Devices
Stanley, T., Neamen, D., Dressendorfer, P., Schwank, J., Winokur, P., Ackermann, M., Jungling, K., Hawkins, C., Grannemann, W.Volume:
32
Year:
1985
Language:
english
Pages:
6
DOI:
10.1109/tns.1985.4334054
File:
PDF, 1.11 MB
english, 1985