Gate-Induced Schottky Barrier Lowering Effect in AlGaN/GaN Metal–2DEG Tunnel Junction Field Effect Transistor
Li Yuan, Hongwei Chen, Qi Zhou, Chunhua Zhou, Chen, K.J.Volume:
32
Year:
2011
Language:
english
Pages:
1224
DOI:
10.1109/led.2011.2159258
File:
PDF, 410 KB
english, 2011