Volume 32; Issue 9

IEEE Electron Device Letters

Volume 32; Issue 9

1

Gate-Induced Schottky Barrier Lowering Effect in AlGaN/GaN Metal–2DEG Tunnel Junction Field Effect Transistor

Li Yuan, Hongwei Chen, Qi Zhou, Chunhua Zhou, Chen, K.J.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 410 KB

english, 2011

2

Metal–Semiconductor–Metal Ultraviolet Avalanche Photodiodes Fabricated on Bulk GaN Substrate

Xie, F., Lu, H., Chen, D.J., Xiu, X.Q., Zhao, H., Zhang, R., Zheng, Y.D.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 335 KB

english, 2011

3

BN/Graphene/BN Transistors for RF Applications

Wang, Han, Taychatanapat, Thiti, Hsu, Allen, Watanabe, Kenji, Taniguchi, Takashi, Jarillo-Herrero, Pablo, Palacios, Tomas

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 492 KB

english, 2011

4

Solution-Processable Nanotube/Polymer Composite for High-Performance TFTs

Liu, Zhiying, Zhang, Zhi-Bin, Chen, Qiang, Zheng, Li-Rong, Zhang, Shi-Li

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 342 KB

english, 2011

5

Modeling the Impact of the Trench Depth on the Gate–Drain Capacitance in Power MOSFETs

Alatise, Olayiwola, Parker-Allotey, Nii-Adotei, Jennings, Michael, Mawby, Phil, Kennedy, Ian, Petkos, George

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 530 KB

english, 2011

6

Low-Noise Microwave Performance of AlN/GaN HEMTs Grown on Silicon Substrate

Medjdoub, Farid, Waldhoff, N., Zegaoui, M., Grimbert, B., Rolland, N., Rolland, P. A.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 340 KB

english, 2011

7

A Novel Three-Dimensional Microheater

Xu, Lei, Li, Tie, Wang, Yuelin

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 344 KB

english, 2011

8

Scalable Monolithically Grown AlGaAs–GaAs Planar Nanowire High-Electron-Mobility Transistor

Miao, Xin, Li, Xiuling

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 336 KB

english, 2011

9

Controllable Filament With Electric Field Engineering for Resistive Switching Uniformity

Sun, Qing-Qing, Gu, Jing-Jing, Chen, Lin, Zhou, Peng, Wang, Peng-Fei, Ding, Shi-Jin, Zhang, David Wei

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 429 KB

english, 2011

10

Fabrication of 150-nm T-Gate Metamorphic AlInAs/GaInAs HEMTs on GaAs Substrates by MOCVD

Li, Haiou, Feng, Zhihong, Tang, Chak Wah, Lau, Kei May

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 200 KB

english, 2011

11

Performance Evaluation of 10-kV SiC Trench Clustered IGBT

Menon, K. G., Nakajima, A., Ngwendson, L., Sankara Narayanan, E. M.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 455 KB

english, 2011

12

Ni Electrode Unipolar Resistive RAM Performance Enhancement by $\hbox{AlO}_{y}$ Incorporation Into $\hbox{HfO}_{x}$ Switching Dielectrics

X. A. Tran, H. Y. Yu, B. Gao, J. F. Kang, X. W. Sun, Y. Yeo, B. Y. Nguyen, M. F. Li

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 517 KB

english, 2011

13

Low Dark-Current Lateral Amorphous-Selenium Metal–Semiconductor–Metal Photodetector

S. Abbaszadeh, N. Allec, K. Wang, K. S. Karim

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 302 KB

english, 2011

14

Drain-Induced Barrier Lowering in Short-Channel Poly-Si TFT After Off-Bias Stress Using Metal-Induced Crystallization of Amorphous Silicon

U. G. Lee, J. Jang

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 397 KB

english, 2011

15

High-Performance Ge nMOSFETs With $\hbox{n}^{+}\hbox{-} \hbox{p}$ Junctions Formed by “Spin-On Dopant”

M. Jamil, J. Mantey, E. U. Onyegam, G. D. Carpenter, E. Tutuc, S. K. Banerjee

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 289 KB

english, 2011

16

Experimental Demonstration of III-Nitride Hot-Electron Transistor With GaN Base

S. Dasgupta, Nidhi, A. Raman, J. S. Speck, U. K. Mishra

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 402 KB

english, 2011

17

220-GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs

Wang, Ronghua, Li, Guowang, Verma, Jai, Sensale-Rodriguez, Berardi, Fang, Tian, Guo, Jia, Hu, Zongyang, Laboutin, Oleg, Cao, Yu, Johnson, Wayne, Snider, Gregory, Fay, Patrick, Jena, Debdeep, Xing, Hui

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 364 KB

english, 2011

18

Hydrogenated Amorphous Silicon Solar Cells on Textured Flexible Substrate Copied From a Textured Glass Substrate Template

Yang, Chieh-Hung, Hsueh, Chun-Yuan, Yeh, Dan-Ju, Ho, Chung-I, Leu, Chyi-Ming, Yeh, Yung-Hui, Lee, Si-Chen

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 336 KB

english, 2011

19

Towards Achieving the Soft-Punch-Through Superjunction Insulated-Gate Bipolar Transistor Breakdown Capability

Antoniou, Marina, Udrea, Florin, Bauer, Friedhelm, Mihaila, Andrei, Nistor, Iulian

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 296 KB

english, 2011

20

65-nm CMOS Monolithically Integrated Subterahertz Transmitter

Hu, Xin, Tripodi, Lorenzo, Matters-Kammerer, Marion K., Cheng, Shi, Rydberg, Anders

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 261 KB

english, 2011

21

Sub-10-nm Extremely Thin Body InGaAs-on-Insulator MOSFETs on Si Wafers With Ultrathin $\hbox{Al}_{2}\hbox{O}_{3}$ Buried Oxide Layers

Yokoyama, Masafumi, Iida, Ryo, Kim, Sanghyeon, Taoka, Noriyuki, Urabe, Yuji, Takagi, Hideki, Yasuda, Tetsuji, Yamada, Hisashi, Fukuhara, Noboru, Hata, Masahiko, Sugiyama, Masakazu, Nakano, Yoshiaki, T

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 242 KB

english, 2011

22

Extreme Short-Channel Effect on RTS and Inverse Scaling Behavior: Source–Drain Implantation Effect in 25-nm nand Flash Memory

Kim, Taehoon, Franklin, Nathan, Srinivasan, Charan, Kalavade, Pranav, Goda, Akira

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 155 KB

english, 2011

23

Gallium-Incorporated TiN Metal Gate With Band-Edge Work Function and Excellent Thermal Stability for PMOS Device Applications

Xu, Qiuxia, Xu, Gaobo, Liang, Qingqing, Yao, Yuan, Duan, Xiaofeng, Li, Junfeng

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 210 KB

english, 2011

24

The Influence of In/Zn Ratio on the Performance and Negative-Bias Instability of Hf–In–Zn–O Thin-Film Transistors Under Illumination

Kim, Hyun-Suk, Park, Joon Seok, Maeng, Wan-Joo, Son, Kyoung Seok, Kim, Tae Sang, Ryu, Myungkwan, Lee, Jiyoul, Lee, Jae Cheol, Ko, Gunwoo, Im, Seongil, Lee, Sang Yoon

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 152 KB

english, 2011

25

Characterizations of Amorphous IGZO Thin-Film Transistors With Low Subthreshold Swing

Su, Liang-Yu, Lin, Hsin-Ying, Lin, Huang-Kai, Wang, Sung-Li, Peng, Lung-Han, Huang, JianJang

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 332 KB

english, 2011

26

Differential Body-Factor Technique for Characterization of Interface Traps in MOSFETs

Yun, Daeyoun, Bae, Minkyung, Jang, Jaeman, Bae, Hagyoul, Shin, Ja Sun, Hong, Euiyeon, Lee, Jieun, Kim, Dae Hwan, Kim, Dong Myong

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 315 KB

english, 2011

27

Interface-Dependent Spin-Reorientation Energy Barrier in Fe/MgO(001) Thin Film

Choi, Heechae, Lee, Eung-Kwan, Cho, Sung Beom, Yoo, Dong Su, Chung, Yong-Chae

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 294 KB

english, 2011

28

Bottom-Contact Pentacene Thin-Film Transistors on Silicon Nitride

Stott, James, Kumatani, Akichika, Minari, Takeo, Tsukagoshi, Kazuhito, Heutz, Sandrine, Aeppli, Gabriel, Nathan, Arokia

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 300 KB

english, 2011

29

Subthreshold Degradation of Gate-all-Around Silicon Nanowire Field-Effect Transistors: Effect of Interface Trap Charge

Hong, B. H., Cho, N., Lee, S. J., Yu, Y. S., Choi, L., Jung, Y. C., Cho, K. H., Yeo, K. H., Kim, D.-W., Jin, G. Y., Oh, K. S., Park, D., Song, S.-H., Rieh, J.-S., Hwang, S. W.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 260 KB

english, 2011

30

Influence of Inversion Layer on Tunneling Field-Effect Transistors

Lee, Woojun, Choi, WooYoung

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 328 KB

english, 2011

31

Through-Strata-Via (TSV) Parasitics and Wideband Modeling for Three-Dimensional Integration/Packaging

Xu, Zheng, Lu, Jian-Qiang

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 283 KB

english, 2011

32

Simple Fabrication of a Three-Dimensional CMOS Inverter Using p-Type Poly-Si and n-Type Amorphous Ga–In–Zn–O Thin-Film Transistors

Jin, Guanghai, Choi, Jonghyun, Lee, Wonpil, Mo, Yeongon, Kim, Hyedong, Kim, Sangsoo, Kim, Moojin, Song, Jonghyun

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 262 KB

english, 2011

33

Stress Effects on Self-Aligned Silicon Nanowire Junctionless Field-Effect Transistors

Huang, C. J., Yang, C. H., Hsueh, C. Y., Lee, J. H., Chang, Y. T., Lee, S. C.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 522 KB

english, 2011

34

Analysis and Fabrication of an LDMOS With High-Permittivity Dielectric

Li, Junhong, Li, Ping, Huo, Weirong, Zhang, Guojun, Zhai, Yahong, Chen, Xingbi

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 246 KB

english, 2011

35

Extraction of Subgap Donor States in a-IGZO TFTs by Generation–Recombination Current Spectroscopy

Bae, Minkyung, Kim, Yongsik, Kim, Sungchul, Kim, Dong Myong, Kim, Dae Hwan

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 374 KB

english, 2011

36

Correlation of Human Metal Model and Transmission Line Pulsing Testing

Malobabic, Slavica, Salcedo, Javier A., Righter, Alan W., Hajjar, Jean-Jacques, Liou, Juin J.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 179 KB

english, 2011

37

Gate-All-Around Poly-Si TFTs With Single-Crystal-Like Nanowire Channels

Kang, Tsung-Kuei, Liao, Ta-Chuan, Lin, Chia-Min, Liu, Han-Wen, Wang, Fang-Hsing, Cheng, Huang-Chung

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 386 KB

english, 2011

38

Complex Band Structures: From Parabolic to Elliptic Approximation

Guan, Ximeng, Kim, Donghyun, Saraswat, Krishna C., Wong, H.-S. Philip

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 282 KB

english, 2011

39

Fundamental Benefits of the Staggered Geometry for Organic Field-Effect Transistors

Kim, Chang Hyun, Bonnassieux, Yvan, Horowitz, Gilles

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 474 KB

english, 2011

40

A Resist-Protection-Oxide Transistor With Adaptable Low-Frequency Noise for Stochastic Neuromorphic Computation in VLSI

Chiu, Tang-Jung, King, Ya-Chin, Gong, Jeng, Tsai, Yi-Hung, Chen, Hsin

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 238 KB

english, 2011

41

A Guideline for the Optimum Fin Width Considering Hot-Carrier and NBTI Degradation in MuGFETs

Lee, Dong Hun, Lee, Seung Min, Yu, Chong Gun, Park, Jong Tae

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 319 KB

english, 2011

42

Comparison of Junctionless and Conventional Trigate Transistors With $L_{g}$ Down to 26 nm

Rios, R., Cappellani, A., Armstrong, M., Budrevich, A., Gomez, H., Pai, R., Rahhal-orabi, N., Kuhn, K.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 439 KB

english, 2011

43

Temperature-Dependent Thermal Properties of Phase-Change Memory Electrode Materials

Bozorg-Grayeli, Elah, Reifenberg, John P., Panzer, Matthew A., Rowlette, Jeremy A., Goodson, Kenneth E.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 198 KB

english, 2011

44

Modeling Short-Channel Effect of Elliptical Gate-All-Around MOSFET by Effective Radius

Zhang, Lining, Li, Lin, He, Jin, Chan, Mansun

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 289 KB

english, 2011

45

Low-Temperature Solution Processing of AlInZnO/InZnO Dual-Channel Thin-Film Transistors

Kim, Kyung Min, Jeong, Woong Hee, Kim, Dong Lim, Rim, You Seung, Choi, Yuri, Ryu, Myung-Kwan, Park, Kyung-Bae, Kim, Hyun Jae

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 354 KB

english, 2011

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