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Design of Tunneling Field-Effect Transistors Using Strained-Silicon/Strained-Germanium Type-II Staggered Heterojunctions
Nayfeh, O.M., Chleirigh, C.N., Hennessy, J., Gomez, L., Hoyt, J.L., Antoniadis, D.A.Volume:
29
Year:
2008
Language:
english
Pages:
1078
DOI:
10.1109/led.2008.2000970
File:
PDF, 539 KB
english, 2008