Volume 29; Issue 9

IEEE Electron Device Letters

Volume 29; Issue 9
2

The Gate Leakage Current in Graphene Field-Effect Transistor

Year:
2008
Language:
english
File:
PDF, 275 KB
english, 2008
7

12-kV p-Channel IGBTs With Low On-Resistance in 4H-SiC

Year:
2008
Language:
english
File:
PDF, 391 KB
english, 2008
12

UV-Enhanced a-Si:H Metal–Semiconductor–Metal Photodetector

Year:
2008
Language:
english
File:
PDF, 179 KB
english, 2008
14

Year:
2008
Language:
english
File:
PDF, 339 KB
english, 2008
15

Year:
2008
Language:
english
File:
PDF, 387 KB
english, 2008
16

Microwave ZnO Thin-Film Transistors

Year:
2008
Language:
english
File:
PDF, 371 KB
english, 2008
17

Flash Cell Arrays

Year:
2008
Language:
english
File:
PDF, 424 KB
english, 2008