High-Performance Microwave Gate-Recessed AlGaN/AlN/GaN...

IEEE Electron Device Letters 2011 Vol. 32; Iss. 5

High-Performance Microwave Gate-Recessed AlGaN/AlN/GaN MOS-HEMT With 73% Power-Added Efficiency

Yue Hao, Ling Yang, Xiaohua Ma, Jigang Ma, Menyi Cao, Caiyuan Pan, Chong Wang, Jincheng Zhang
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
32
Year:
2011
Language:
english
Pages:
629
DOI:
10.1109/led.2011.2118736
File:
PDF, 501 KB
english, 2011
Conversion to is in progress
Conversion to is failed