Volume 32; Issue 5

IEEE Electron Device Letters

Volume 32; Issue 5

1

Achieving Stable Through-Silicon Via (TSV) Capacitance with Oxide Fixed Charge

Zhang, L., Li, H.Y., Gao, S., Tan, C.S.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 154 KB

english, 2011

2

High-Performance Microwave Gate-Recessed AlGaN/AlN/GaN MOS-HEMT With 73% Power-Added Efficiency

Yue Hao, Ling Yang, Xiaohua Ma, Jigang Ma, Menyi Cao, Caiyuan Pan, Chong Wang, Jincheng Zhang

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 501 KB

english, 2011

3

Scaling of Hydrogen-Terminated Diamond FETs to Sub-100-nm Gate Dimensions

Moran, D.A.J., Fox, O.J.L., McLelland, H., Russell, S., May, P.W.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 169 KB

english, 2011

4

Chip-Level Thermoelectric Power Generators Based on High-Density Silicon Nanowire Array Prepared With Top-Down CMOS Technology

Li, Y, Buddharaju, K, Singh, N, Lo, G Q, Lee, S J

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 369 KB

english, 2011

5

CMOS TFT Op-Amps: Performance and Limitations

Dey, Aritra, Avendanno, Adrian, Venugopal, Sameer, Allee, David R., Quevedo, Manuel, Gnade, Bruce

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 227 KB

english, 2011

6

Zhang, R, Guo, X G, Song, C Y, Buchanan, M, Wasilewski, Z R, Cao, J C, Liu, H C

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 200 KB

english, 2011

7

1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance

. Rongming Chu, A. Corrion, M. Chen, . Ray Li, D. Wong, D. Zehnder, B. Hughes, K. Boutros

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 346 KB

english, 2011

8

Fully Gravure-Printed D Flip-Flop on Plastic Foils Using Single-Walled Carbon-Nanotube-Based TFTs

J. Noh, . Minhun Jung, . Kyunghwan Jung, . Gwangyong Lee, . Joonseok Kim, . Soyeon Lim, . Daae Kim, . Youngchul Choi, . Yoonjin Kim, V. Subramanian, . Gyoujin Cho

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 398 KB

english, 2011

9

Electrical Characteristics of Germanium $\hbox{n}^{+}/ \hbox{p}$ Junctions Obtained Using Rapid Thermal Annealing of Coimplanted P and Sb

G. Thareja, S. Cheng, T. Kamins, K. Saraswat, Y. Nishi

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 215 KB

english, 2011

10

A New Differential P-Channel Logic-Compatible Multiple-Time Programmable (MTP) Memory Cell With Self-Recovery Operation

Te-liang Lee, Yi-hung Tsai, Wun-jie Lin, Hsiao-lan Yang, Chiu-wang Lien, Chrong Jung Lin, Ya-chin King

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 223 KB

english, 2011

11

Lee, Dong Seup, Gao, Xiang, Guo, Shiping, Palacios, Tomás

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 420 KB

english, 2011

12

AlGaN/GaN High-Electron-Mobility Transistors Fabricated Through a Au-Free Technology

Hyung-Seok Lee,, Dong Seup Lee,, Palacios, T

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 535 KB

english, 2011

13

Schottky Barrier Height Inhomogeneity-Induced Deviation From Near-Ideal Pd/InAlN Schottky Contact

Chen, Z T, Fujita, K, Ichikawa, J, Egawa, T

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 299 KB

english, 2011

14

N-Polar GaN MIS-HEMTs With a 12.1-W/mm Continuous-Wave Output Power Density at 4 GHz on Sapphire Substrate

Kolluri, Seshadri, Keller, Stacia, DenBaars, Steven P., Mishra, Umesh K.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 265 KB

english, 2011

15

Heterojunction Vertical Band-to-Band Tunneling Transistors for Steep Subthreshold Swing and High on Current

Ganapathi, K, Salahuddin, S

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 280 KB

english, 2011

16

Reset Switching Probability of Resistive Switching Devices

An Chen,, Ming-Ren Lin,

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 228 KB

english, 2011

17

Dynamic Modeling and Atomistic Simulations of SET and RESET Operations in $\hbox{TiO}_{2}$-Based Unipolar Resistive Memory

Liang Zhao,, Jinyu Zhang,, Yu He,, Ximeng Guan,, He Qian,, Zhiping Yu,

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 709 KB

english, 2011

18

Nonvolatile Memory by All-Around-Gate Junctionless Transistor Composed of Silicon Nanowire on Bulk Substrate

Choi, Sung-Jin, Moon, Dong-Il, Kim, Sungho, Ahn, Jae-Hyuk, Lee, Jin-Seong, Kim, Jee-Yeon, Choi, Yang-Kyu

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 474 KB

english, 2011

19

Removal of Crystal Orientation Effects on the Current Gain of 4H-SiC BJTs Using Surface Passivation

Ghandi, R, Buono, B, Zetterling, C.-M, Domeij, M, Shayestehaminzadeh, S, Östling, M

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 162 KB

english, 2011

20

High-Performance Drain-Offset a-IGZO Thin-Film Transistors

Mativenga, Mallory, Choi, Min Hyuk, Kang, Dong Han, Jang, Jin

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 319 KB

english, 2011

21

The Influence of a Piezoelectric Field on the Dynamic Performance of GaN-Based Green Light-Emitting Diodes With an InGaN Insertion Layer

Jin-Wei Shi,, Kuo, F.-M, Huang, H.-W, Jinn-Kong Sheu,, Chih-Ciao Yang,, Wei-Chih Lai,, Ming-Lung Lee,

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 208 KB

english, 2011

22

Heterogeneously Integrated Vapor–Liquid–Solid Grown Silicon Probes/(111) and Silicon MOSFETs/(100)

Okugawa, Akihiro, Mayumi, Kotaro, Ikedo, Akihito, Ishida, Makoto, Kawano, Takeshi

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 409 KB

english, 2011

23

A New Model for Two-Dimensional Electrical-Field-Dependent $V_{\rm th}$ Instability of pMOSFETs With Ultrathin DPN Gate Dielectrics

Yang, Jiaqi, Yang, Jingfeng, Liu, X. Y., Han, R. Q., Kang, J. F., Gan, Z. H., Liao, C. C., Wu, H. M.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 420 KB

english, 2011

24

Electronic Properties and Photoresponse of Polycarbazole-Multiwalled Carbon Nanotube Nanocomposite/Aluminum Schottky Diode

Singh, A K, Chakrabarti, P, Prakash, R

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 264 KB

english, 2011

25

InP/GaAsSb DHBTs With 500-GHz Maximum Oscillation Frequency

Lovblom, Rickard, Fluckiger, Ralf, Zeng, Yuping, Ostinelli, Olivier, Alt, Andreas R., Benedickter, Hansruedi, Bolognesi, C. R.

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 478 KB

english, 2011

26

Enhanced Luminescence of IEL Device With Carbon-Nanotube–Dielectric Composite Layer

Kuo-Feng Chen,, Fang-Hsing Wang,, Yu-Han Chien,, Chin-Chia Chang,, Meng-Ying Chuang,

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 393 KB

english, 2011

27

On Gate Capacitance of Nanotube Networks

Liu, Zhiying, Li, Jiantong, Qiu, Zhi-Jun, Zhang, Zhi-Bin, Zheng, Li-Rong, Zhang, Shi-Li

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 323 KB

english, 2011

28

A Physics-Based Approximation for the Polysilicon Thin-Film Transistor Surface Potential

Deng, Wanling, Huang, Junkai

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 132 KB

english, 2011

29

$\hbox{Zr}_{0.27}\hbox{Ti}_{0.73}\hbox{O}_{2}$-Based MSM Ultraviolet Detectors With Pt Electrodes

Haifeng Zhang,, Shengping Ruan,, Tianjiao Xie,, Caihui Feng,, Pengfei Qu,, Weiyou Chen,, Wei Dong,

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 258 KB

english, 2011

30

Characterization of Random Telegraph Signal Noise of High-Performance p-MOSFETs With a High-$k$ Dielectric/Metal Gate

Hyuk-Min Kwon,, In-Shik Han,, Jung-Deuk Bok,, Sang-Uk Park,, Yi-Jung Jung,, Ga-Won Lee,, Yi-Sun Chung,, Jung-Hwan Lee,, Chang Yong Kang,, Kirsch, P, Jammy, R, Hi-Deok Lee,

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 460 KB

english, 2011

31

Excellent State Stability of Cu/SiC/Pt Programmable Metallization Cells for Nonvolatile Memory Applications

Lee, Wootae, Park, Jubong, Son, Myungwoo, Lee, Joonmyoung, Jung, Seungjae, Kim, Seonghyun, Park, Sangsu, Shin, Jungho, Hwang, Hyunsang

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 383 KB

english, 2011

32

Comparison of Ge Surface Passivation Between $ \hbox{SnGeO}_{x}$ Films Formed by Oxidation of Sn/Ge and $ \hbox{SnGe}_{x}/\hbox{Ge}$ Structures

Wu, Yung-Hsien, Wu, Min-Lin, Lyu, Rong-Jhe, Wu, Jia-Rong, Lin, Chia-Chun, Chen, Lun-Lun

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 421 KB

english, 2011

33

Effect of Scaling $\hbox{WO}_{x}$-Based RRAMs on Their Resistive Switching Characteristics

Seonghyun Kim,, Biju, K P, Minseok Jo,, Seungjae Jung,, Jubong Park,, Joonmyoung Lee,, Wootae Lee,, Jungho Shin,, Sangsu Park,, Hyunsang Hwang,

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 364 KB

english, 2011