Single-Event-Upset Critical Charge Measurements and...

IEEE Transactions on Nuclear Science 2006 Vol. 53; Iss. 6

Single-Event-Upset Critical Charge Measurements and Modeling of 65 nm Silicon-on-Insulator Latches and Memory Cells

Heidel, David F., Rodbell, Kenneth P., Oldiges, Phil, Gordon, Michael S., Tang, Henry H. K., Cannon, Ethan H., Plettner, Cristina
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Volume:
53
Year:
2006
Language:
english
Pages:
6
DOI:
10.1109/tns.2006.886223
File:
PDF, 291 KB
english, 2006
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