Power Performance of AlGaN/GaN HEMTs Grown on SiC by...

IEEE Electron Device Letters 2007 Vol. 28; Iss. 11

Power Performance of AlGaN/GaN HEMTs Grown on SiC by Ammonia-MBE at 4 and 10 GHz

Poblenz, C., Corrion, A.L., Recht, F., Chang Soo Suh, Chu, R., Shen, L., Speck, J.S., Mishra, U.K.
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Volume:
28
Year:
2007
Language:
english
Pages:
948
DOI:
10.1109/led.2007.907266
File:
PDF, 106 KB
english, 2007
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