Volume 28; Issue 11

IEEE Electron Device Letters

Volume 28; Issue 11

1

Power Performance of AlGaN/GaN HEMTs Grown on SiC by Ammonia-MBE at 4 and 10 GHz

Poblenz, C., Corrion, A.L., Recht, F., Chang Soo Suh, Chu, R., Shen, L., Speck, J.S., Mishra, U.K.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 106 KB

english, 2007

2

N-Channel (110)-Sidewall Strained FinFETs With Silicon–Carbon Source and Drain Stressors and Tensile Capping Layer

Tsung-Yang Liow, Kian-Ming Tan, Lee, R.T.P., Chih-Hang Tung, Samudra, G.S., Balasubramanian, N., Yee-Chia Yeo

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 281 KB

english, 2007

3

Design of On-Chip Transformer With Various Coil Widths to Achieve Minimal Metal Resistance

Hsu, Heng-Ming, Tseng, Chien-Wen

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 475 KB

english, 2007

4

A Phase Change Memory Compact Model for Multilevel Applications

Ventrice, D., Fantini, P., Redaelli, Andrea, Pirovano, A., Benvenuti, A., Pellizzer, F.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 265 KB

english, 2007

5

Remarkable Reduction of On-Resistance by Ion Implantation in GaN/AlGaN/GaN HEMTs With Low Gate Leakage Current

Nomoto, Kazuki, Tajima, Taku, Mishima, Tomoyoshi, Satoh, Masataka, Nakamura, Tohru

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 336 KB

english, 2007

6

Effects of Sulfur Passivation on Germanium MOS Capacitors With HfON Gate Dielectric

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 432 KB

english, 2007

7

A Simple Spacer Technique to Fabricate Poly-Si TFTs With 50-nm Nanowire Channels

C. Chang, C. Deng, H. Chang, C. Chang, T. Lei

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 343 KB

english, 2007

8

A Novel Single Polysilicon EEPROM Cell With a Polyfinger Capacitor

K. Na, Y. Kim, Y. Kim

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 269 KB

english, 2007

9

A New Nonvolatile Bistable Polymer-Nanoparticle Memory Device

Heng-tien Lin, Zingway Pei, Jun-rong Chen, Gue-wuu Hwang, Jui-fen Fan, Yi-jen Chan

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 275 KB

english, 2007

10

Improved Electrical Characteristics of Ge-on-Si Field-Effect Transistors With Controlled Ge Epitaxial Layer Thickness on Si Substrates

J. Oh, P. Majhi, H. Lee, O. Yoo, S. Banerjee, C. Y. Kang, J. Yang, R. Harris, H. Tseng, R. Jammy

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 129 KB

english, 2007

11

1200-V 5.2-$\hbox{m}\Omega\cdot\hbox{cm}^{2}$ 4H-SiC BJTs With a High Common-Emitter Current Gain

H. Lee, M. Domeij, C. Zetterling, M. Ostling, F. Allerstam, E. O. Sveinbjornsson

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 225 KB

english, 2007

12

Good High-Temperature Stability of $\hbox{TiN}/ \hbox{Al}_{2}\hbox{O}_{3}/\hbox{WN}/\hbox{TiN}$ Capacitors

T. Pan, C. Hsieh, T. Huang, J. Yang, P. Kuo

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 283 KB

english, 2007

13

Achieving Low-$V_{T}$ Ni-FUSI CMOS by Ultra-Thin $\hbox{Dy}_{2}\hbox{O}_{3}$ Capping of Hafnium Silicate Dielectrics

A. Veloso, H. Y. Yu, S. Z. Chang, C. Adelmann, B. Onsia, S. Brus, M. Demand, A. Lauwers, B. J. O'sullivan, R. Singanamalla, G. Pourtois, P. Lehnen, S. Van Elshocht, K. De Meyer, M. Jurczak, P. P. Absi

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 452 KB

english, 2007

14

Felbinger, Jonathan G., Chandra, M. V. S., Sun, Yunju, Eastman, Lester F., Wasserbauer, John, Faili, Firooz, Babic, Dubravko, Francis, Daniel, Ejeckam, Felix

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 109 KB

english, 2007

15

Mobility Modeling and Its Extraction Technique for Manufacturing Strained-Si MOSFETs

Wang, Jhong-Sheng, Chen, William Po-Nien, Shih, Chun-Hsing, Lien, Chenhsin, Su, Pin, Sheu, Yi-Ming, Chao, Donald Yuan-Shun, Goto, Ken-Ichi

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 121 KB

english, 2007

16

Metal–Oxide–High-$\kappa$ Dielectric–Oxide–Semiconductor (MOHOS) Capacitors and Field-Effect Transistors for Memory Applications

Hsu, Hsin-hao, Chang, Ingram Yin-ku, Lee, Joseph Ya-min

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 130 KB

english, 2007

17

Improved Electrical Characteristics and Reliability of MILC Poly-Si TFTs Using Fluorine-Ion Implantation

Chang, Chih-Pang, Wu, YewChung Sermon

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 143 KB

english, 2007

18

On the Apparent Mobility in Nanometric n-MOSFETs

Zilli, M., Esseni, D., Palestri, P., Selmi, L.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 134 KB

english, 2007

19

The Origin of Electron Mobility Enhancement in Strained MOSFETs

Hadjisavvas, G., Tsetseris, L., Pantelides, S. T.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 198 KB

english, 2007

20

Improving the Electrical Properties of NILC Poly-Si Films Using a Gettering Substrate

Hu, Chen-Ming, Wu, YewChung Sermon, Lin, Chi-Ching

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 177 KB

english, 2007

21

CMOS Inverter Based on Gate-All-Around Silicon-Nanowire MOSFETs Fabricated Using Top-Down Approach

Rustagi, S. C., Singh, N., Fang, W. W., Buddharaju, K. D., Omampuliyur, S. R., Teo, S. H. G., Tung, C. H., Lo, G. Q., Balasubramanian, N., Kwong, D. L.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 428 KB

english, 2007

22

Young's Modulus Measurements in Standard IC CMOS Processes Using MEMS Test Structures

Marshall, Janet C., Herman, David L., Vernier, P. Thomas, DeVoe, Don L., Gaitan, Michael

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 146 KB

english, 2007

23

Improvement of the Conversion Performance of a Resonating Multimode Microelectromechanical Mixer-Filter Through Parametric Amplification

Koskenvuori, M., Tittonen, I.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 150 KB

english, 2007

24

-Resistance Degradation in Lateral DMOS Transistors

Chen, Jone F., Lee, J. R., Wu, Kuo-Ming, Huang, Tsung-Yi, Liu, C. M., Hsu, S. L.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 334 KB

english, 2007

25

Effect of Substrate Parasitic Inductance on Silicon-Based Transmission Lines and On-Chip Inductors

Huang, Fengyi, Lu, Jingxue, Zhu, Yufeng, Jiang, Nan, Wang, Xianchao, Chi, Yusong

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 214 KB

english, 2007

26

Hot-Carrier Effects in Strained n-Channel Transistor With Silicon–Carbon $(\hbox{Si}_{1 - y}\hbox{C}_{y})$ Source/Drain Stressors and Its Orientation Dependence

Ang, Kah-Wee, Wan, Chunlei, Balasubramanian, Narayanan, Samudra, Ganesh S., Yeo, Yee-Chia

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 465 KB

english, 2007

27

Submicrometer Inversion-Type Enhancement-Mode InGaAs MOSFET With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric

Xuan, Y., Wu, Y. Q., Lin, H. C., Shen, T., Ye, Peide D.

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 176 KB

english, 2007

28

Current-Dependent Switching Characteristics of PI-Diphenyl Carbamyl Films

Kim, Mijung, Choi, Seungchel, Ree, Moonhor, Kim, Ohyun

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 89 KB

english, 2007

29

IEEE Electron Devices Society Meetings Calendar for 2007 (as of 05 October 2007)

Journal:

IEEE Electron Device Letters

Year:

2007

Language:

english

File:

PDF, 46 KB

english, 2007