Current status for light-emitting diode with Eu-doped GaN...

Journal of Luminescence 2012 Vol. 132; Iss. 12

Current status for light-emitting diode with Eu-doped GaN active layer grown by MBE

Akihiro Wakahara, Hiroto Sekiguchi, Hiroshi Okada, Yasufumi Takagi
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Volume:
132
Year:
2012
Language:
english
Pages:
1
DOI:
10.1016/j.jlumin.2012.02.001
File:
PDF, 485 KB
english, 2012
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